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參數(shù)資料
| 型號： | WSE128K16-35H1M |
| 元件分類： | 存儲器 |
| 英文描述： | SPECIALTY MEMORY CIRCUIT, CHIP66 |
| 封裝： | CERAMIC, HIP-66 |
| 文件頁數(shù)： | 14/15頁 |
| 文件大?。?/td> | 299K |
| 代理商： | WSE128K16-35H1M |
8
White Electronic Designs Corporation Phoenix, AZ (602) 437-1520
WSE128K16-XXX
EEPROM AC READ CHARACTERISTICS
(VCC = 5.0V, VSS = 0V, TA = -55
°C to +125°C)
FIG. 9 EEPROM READ WAVEFORMS
t
ADDRESS
ECS1-2
OE
EEPROM
DATA
OUTPUT
OH
tDF
t ACC
t RC
t OE
tACS
OUTPUT
VALID
ADDRESS VALID
HIGH Z
EEPROM READ
The WSE128K16-XXX EEPROM stores data at the memory
location determined by the address pins. When ECS and OE
are low and EWE is high, this data is present on the outputs.
When ECS and OE are high, the outputs are in a high imped-
ance state. This two line control prevents bus contention.
NOTES:
OE may be delayed up to tACS - tOE after the
falling edge of ECS without impact on tOE or by
tACC - tOE after an address change without
impact on tACC.
Read Cycle Parameter
Symbol
-120
-150
-300
Unit
Min
Max
Min
Max
Min
Max
Read Cycle Time
tRC
120
150
300
ns
Address Access Time
tACC
120
150
300
ns
Chip Select Access Time
tACS
120
150
300
ns
Output Hold from Add. Change, OE or ECS
tOH
00
0
ns
Output Enable to Output Valid
tOE
050
0
55
085
ns
Chip Select or OE to High Z Output
tDF
70
ns
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| WSE128K16-35H1MA | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:128KX16 SRAM/EEPROM MODULE |
| WSE128K16-42G2TC | 制造商:WEDC 制造商全稱:White Electronic Designs Corporation 功能描述:128Kx16 SRAM/EEPROM MODULE |
| WSE128K16-42G2TCA | 制造商:WEDC 制造商全稱:White Electronic Designs Corporation 功能描述:128Kx16 SRAM/EEPROM MODULE |
| WSE128K16-42G2TI | 制造商:WEDC 制造商全稱:White Electronic Designs Corporation 功能描述:128Kx16 SRAM/EEPROM MODULE |
| WSE128K16-42G2TIA | 制造商:WEDC 制造商全稱:White Electronic Designs Corporation 功能描述:128Kx16 SRAM/EEPROM MODULE |
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