- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄361941 > WSE128K16-35H1IA (Electronic Theatre Controls, Inc.) 128KX16 SRAM/EEPROM MODULE PDF資料下載
參數(shù)資料
| 型號： | WSE128K16-35H1IA |
| 廠商： | Electronic Theatre Controls, Inc. |
| 英文描述： | 128KX16 SRAM/EEPROM MODULE |
| 中文描述： | 128KX16的SRAM / EEPROM的模塊 |
| 文件頁數(shù)： | 10/15頁 |
| 文件大?。?/td> | 158K |
| 代理商： | WSE128K16-35H1IA |
10
White Electronic Designs Corporation Phoenix, AZ (602) 437-1520
WSE128K16-XXX
EEPROM PAGE WRITE OPERATION
The WSE128K16-XXX has a page write operation that allows one
to 128 bytes of data to be written into the device and consecutively
loads during the internal programming period. Successive bytes
may be loaded in the same manner after the first data byte has
been loaded. An internal timer begins a time out operation at each
write cycle. If another write cycle is completed within 150
μ
s or
less, a new time out period begins. Each write cycle restarts the
delay period. The write cycles can be continued as long as the
interval is less than the time out period.
The usual procedure is to increment the least significant
address lines from A0 through A6 at each write cycle. In this
manner a page of up to 128 bytes can be loaded in to the
EEPROM in a burst mode before beginning the relatively long
interval programming cycle.
After the 150
μ
s time out is completed, the EEPROM begins an
internal write cycle. During this cycle the entire page of bytes
will be written at the same time. The internal programming
cycle is the same regardless of the number of bytes accessed.
EEPROM PAGE WRITE CHARACTERISTICS
(V
CC
= 5.0V, V
SS
= 0V, T
A
= -55
°
C to +125
°
C)
FIG. 11
EEPROM PAGE MODE
WRITE WAVEFORMS
1. Page address must remain valid for duration of write cycle.
Page Mode Write Characteristics
Parameter
Write Cycle Time, TYP = 6ms
Address Set-up Time
Address Hold Time (1)
Data Set-up Time
Data Hold Time
Write Pulse Width
Byte Load Cycle Time
Write Pulse Width High
Symbol
Unit
Min
Max
10
t
WC
t
AS
t
AH
t
DS
t
DH
t
WP
t
BLC
t
WPH
ms
ns
ns
ns
ns
ns
μ
s
ns
0
100
100
10
150
150
50
OE
BYTE 0
BYTE 1
BYTE 2
BYTE 3
VALID DATA
VALID
ADDRESS
t
WC
t
BLC
t
WPH
t
WP
ADDRESS
EEPROM
DATA
ECS
1-2
EWE
1-2
BYTE 127
t
DS
t
DH
t
AS
t
AH
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| WSE128K16-35H1M | 128KX16 SRAM/EEPROM MODULE |
| WSE128K16-35H1MA | 128KX16 SRAM/EEPROM MODULE |
| WSF128K16-37G1TM | 128Kx16 SRAM/FLASH MODULE, SMD 5962-96900 |
| WSF128K16-37G1TIA | 128Kx16 SRAM/FLASH MODULE, SMD 5962-96900 |
| WSF128K16-37G1TMA | 128Kx16 SRAM/FLASH MODULE, SMD 5962-96900 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| WSE128K16-35H1M | 制造商:Microsemi Corporation 功能描述:128K X 16 MIXED MODULE, 5V, 70NS SRAM, 300NS EEPROM, 66 PGA - Bulk 制造商:White Electronic Designs 功能描述:128K X 16 MIXED MODULE, 5V, 70NS SRAM, 300NS EEPROM, 66 PGA - Bulk |
| WSE128K16-35H1MA | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:128KX16 SRAM/EEPROM MODULE |
| WSE128K16-42G2TC | 制造商:WEDC 制造商全稱:White Electronic Designs Corporation 功能描述:128Kx16 SRAM/EEPROM MODULE |
| WSE128K16-42G2TCA | 制造商:WEDC 制造商全稱:White Electronic Designs Corporation 功能描述:128Kx16 SRAM/EEPROM MODULE |
| WSE128K16-42G2TI | 制造商:WEDC 制造商全稱:White Electronic Designs Corporation 功能描述:128Kx16 SRAM/EEPROM MODULE |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。