參數(shù)資料
型號(hào): WS512K8L20M
廠商: WHITE ELECTRONIC DESIGNS CORP
元件分類: SRAM
英文描述: 512K X 8 MULTI DEVICE SRAM MODULE, 20 ns, CDIP32
封裝: 0.600 INCH, CERAMIC, DIP-32
文件頁(yè)數(shù): 3/6頁(yè)
文件大?。?/td> 155K
代理商: WS512K8L20M
3
White Electronic Designs Corporation (602) 437-1520 www.wedc.com
White Electronic Designs
WS512K8-XCX
May 2004
Rev. 4
AC CHARACTERISTICS
(VCC = 5.0V, GND = 0V, -55°C ≤ TA ≤ 125°C)
Parameter
Read Cycle
Symbol
-20
-25
-35
-45
Units
Min
Max
Min
Max
Min
Max
Min
Max
Read Cycle Time
tRC
20
25
35
45
ns
Address Access Time
tAA
20
25
35
45
ns
Output Hold from Address Change
tOH
3333
ns
Chip Select Access Time
tACS
20
25
35
45
ns
Output Enable to Output Valid
tOE
10
25
35
ns
Chip Select to Output in Low Z
tCLZ1
3333
ns
Output Enable to Output in Low Z
tOLZ1
0000
ns
Chip Disable to Output in High Z
tCHZ1
15
17
20
30
ns
Output Disable to Output in High Z
tOHZ1
12
15
20
25
ns
1. This parameter is guaranteed by design but not tested.
AC CHARACTERISTICS
(VCC = 5.0V, GND =0V, -55°C ≤ TA ≤ 125°C)
Parameter
Write Cycle
Symbol
-20
-25
-35
-45
Units
Min
Max
Min
Max
Min
Max
Min
Max
Write Cycle Time
tWC
20
25
35
45
ns
Chip Select to End of Write
tCW
16
20
25
30
ns
Address Valid to End of Write
tAW
16
20
25
30
ns
Data Valid to End of Write
tDW
15
20
25
ns
Write Pulse Width
tWP
16
20
25
30
ns
Address Setup Time
tAS
2222
ns
Address Hold Time
tAH
2222
ns
Output Active from End of Write
tOW1
4555
ns
Write Enable to Output in High Z
tWHZ1
10015020025
ns
Data Hold Time
tDH
1111
ns
1. This parameter is guaranteed by design but not tested.
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