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參數(shù)資料
| 型號(hào)： | WS512K8-35CMA |
| 廠商： | Electronic Theatre Controls, Inc. |
| 元件分類： | SRAM |
| 英文描述： | 512Kx8 SRAM MODULE, SMD 5962-92078 |
| 中文描述： | 512Kx8的SRAM模塊，貼片5962-92078 |
| 文件頁(yè)數(shù)： | 2/6頁(yè) |
| 文件大?。?/td> | 157K |
| 代理商： | WS512K8-35CMA |
2
White Electronic Designs Corporation Phoenix, AZ (602) 437-1520
WS512K8-XCX
FIG. 2
AC TEST CIRCUIT
I
Current Source
D.U.T.
C = 50 pf
I
OL
V
≈
1.5V
(Bipolar Supply)
Z
Current Source
OH
TRUTH TABLE
Parameter
Input capacitance
Output capicitance
This parameter is guaranteed by design but not tested.
Symbol
C
IN
C
OUT
Condition
Max
45
45
Unit
pF
pF
V
IN
= 0V, f = 1.0MHz
V
OUT
= 0V, f = 1.0MHz
CAPACITANCE
(T
A
= +25
°
C)
AC TEST CONDITIONS
Parameter
Input Pulse Levels
Input Rise and Fall
Input and Output Reference Level
Output Timing Reference Level
Typ
Unit
V
ns
V
V
V
IL
= 0, V
IH
= 3.0
5
1.5
1.5
NOTES:
V
Z
is programmable from -2V to +7V.
I
OL
& I
OH
programmable from 0 to 16mA.
Tester Impedance Z
0
= 75
.
V
Z
is typically the midpoint of V
OH
and V
OL
.
I
OL
& I
OH
are adjusted to simulate a typical resistive load circuit.
ATE tester includes jig capacitance.
ABSOLUTE MAXIMUM RATINGS
Parameter
Operating Temperature
Storage Temperature
Signal Voltage Relative to GND
Junction Temperature
Supply Voltage
Symbol
T
A
T
STG
V
G
T
J
V
CC
Min
-55
-65
-0.5
Max
+125
+150
Vcc+0.5
150
7.0
Unit
°
C
°
C
V
°
C
V
-0.5
RECOMMENDED OPERATING CONDITIONS
Parameter
Supply Voltage
Input High Voltage
Input Low Voltage
Operating Temp. (Mil.)
Symbol
V
CC
V
IH
V
IL
T
A
Min
4.5
2.2
-0.5
-55
Max
5.5
Unit
V
V
V
°
C
V
CC
+ 0.3
+0.8
+125
CS
H
L
L
L
OE
X
L
X
H
WE
X
H
L
H
Mode
Standby
Read
Write
Out Disable
Data I/O
High Z
Data Out
Data In
High Z
Power
Standby
Active
Active
Active
DC CHARACTERISTICS
(V
CC
= 5.0V, GND = 0V, T
A
= -55
°
C to +125
°
C)
Parameter
Symbol
Conditions
-20
-25
-35
-45
Units
Min
Max
10
10
210
80
0.4
Min
Max
10
10
210
60
0.4
Min
Max
10
10
210
60
0.4
Min
Max
10
10
210
55
0.4
Input Leakage Current
Output Leakage Current
Operating Supply Current
Standby Current
Output Low Voltage
Output High Voltage
NOTE: DC test conditions: V
IH
= V
CC
-0.3V, V
IL
= 0.3V
I
LI
I
LO
I
CC
I
SB
V
OL
V
OH
V
CC
= 5.5, V
IN
= GND to V
CC
CS = V
IH
, OE = V
IH
, V
OUT
= GND to V
CC
CS = V
IL
, OE = V
IH
, f = 5MHz, Vcc = 5.5
CS = V
IH
, OE = V
IH
, f = 5MHz
I
OL
= 8mA, Vcc = 4.5
I
OH
= -4.0mA, Vcc = 4.5
μ
A
μ
A
mA
mA
V
V
2.4
2.4
2.4
2.4
DATA RETENTION CHARACTERISTICS
(T
A
= -55
°
C to +125
°
C)
Parameter
Symbol
Conditions
-20
Typ
-25
Typ
-35
Typ
-45
Typ
Units
Min
2.0
Max
5.5
12.8
Min
2.0
Max
5.5
12.8
Min
2.0
Max
5.5
12.8
Min
2.0
Max
5.5
12.8
Data Retention Supply Voltage
Data Retention Current
V
DR
I
CCDR1
CS
≥
V
CC
-0.2V
V
CC
= 3V
V
8.0
8.0
8.0
8.0
mA
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