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參數(shù)資料
| 型號： | WS512K48-17G4WX |
| 英文描述： | 512Kx48 SRAM Module(512Kx48靜態(tài)RAM模塊（存取時間17ns）) |
| 中文描述： | 512Kx48 SRAM的模塊（512Kx48靜態(tài)內(nèi)存模塊（存取時間17ns）） |
| 文件頁數(shù)： | 3/5頁 |
| 文件大小： | 80K |
| 代理商： | WS512K48-17G4WX |
3
White Electronic Designs Corporation (602) 437-1520 www.whiteedc.com
WS512K48-XG4WX
Parameter
Symbol
-17
-20
-25
-35
Units
Read Cycle
Min
Max
Min
Max
Min
Max
Read Cycle Time
t
RC
17
20
25
35
ns
Address Access Time
t
AA
17
20
25
35
ns
Output Hold from Address Change
t
OH
0
0
0
0
ns
Chip Select Access Time
t
ACS
17
20
25
35
ns
Output Enable to Output Valid
t
OE
10
12
15
20
ns
Chip Select to Output in Low Z
t
CLZ
1
3
3
3
3
ns
Output Enable to Output in Low Z
t
OLZ
1
0
0
0
0
ns
Chip Disable to Output in High Z
t
CHZ
1
10
12
12
20
ns
Output Disable to Output in High Z
t
OHZ
1
10
12
12
20
ns
1. This parameter is guaranteed by design but not tested.
AC CHARACTERISTICS
(V
CC
= 5.0V, T
A
= -55
°
C To +125
°
C)
AC CHARACTERISTICS
(V
CC
= 5.0V, T
A
= -55
°
C To +125
°
C)
Parameter
Symbol
-17
-20
-25
-35
Units
Write Cycle
Min
Max
Min
Max
Min
Max
Min
Max
Write Cycle Time
t
WC
17
20
25
35
ns
Chip Select to End of Write
t
CW
14
15
20
25
ns
Address Valid to End of Write
t
AW
15
15
20
25
ns
Data Valid to End of Write
t
DW
10
12
15
20
ns
Write Pulse Width
t
WP
14
15
20
25
ns
Address Setup Time
t
AS
0
0
0
0
ns
Address Hold Time
t
AH
0
0
0
0
ns
Output Active from End of Write
t
OW
1
3
3
3
4
ns
Write Enable to Output in High Z
t
WHZ
1
10
12
15
20
ns
Data Hold Time
t
DH
0
0
0
0
ns
1. This parameter is guaranteed by design but not tested.
I
Current Source
D.U.T.
C = 50 pf
I
OL
V
≈
1.5V
(Bipolar Supply)
Z
Current Source
OH
NOTES:
V
Z
is programmable from -2V to +7V.
I
OL
& I
OH
programmable from 0 to 16mA.
Tester Impedance Z
0
= 75
.
V
Z
is typically the midpoint of V
OH
and V
OL
.
I
OL
& I
OH
are adjusted to simulate a typical resistive load circuit.
ATE tester includes jig capacitance.
AC TEST CIRCUIT
AC TEST CONDITIONS
Parameter
Input Pulse Levels
Input Rise and Fall
Input and Output Reference Level
Output Timing Reference Level
Typ
Unit
V
ns
V
V
V
IL
= 0, V
IH
= 3.0
5
1.5
1.5
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| WS512K48-25G6WX | 512Kx48 SRAM Module(512Kx48靜態(tài)RAM模塊（存取時間25ns）) |
| WS512K48-35G7WX | 512Kx48 SRAM Module(512Kx48靜態(tài)RAM模塊（存取時間35ns）) |
| WS512K8-20CX | 512Kx8 SRAM Module(512Kx8 靜態(tài)RAM模塊（存取時間20ns）) |
| WS512K8-25CX | 512Kx8 SRAM Module(512Kx8 靜態(tài)RAM模塊（存取時間25ns）) |
| WS512K8-35CX | 512Kx8 SRAM Module(512Kx8 靜態(tài)RAM模塊（存取時間45ns）) |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| WS512K48-XG4WX | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:SRAM MCP |
| WS512K8-100CC | 制造商:White Electronic Designs 功能描述:512K X 8 SRAM MODULE, 5V, 100NS, 32 DIP, COMMERCIAL SCREENED - Bulk |
| WS512K8-100CI | 制造商:White Electronic Designs 功能描述:512K X 8 SRAM MODULE, 5V, 100NS, 32 DIP, INDUSTRIAL SCREENED - Bulk |
| WS512K8-100CIE | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 SRAM Module |
| WS512K8-100CM | 制造商:White Electronic Designs 功能描述:512K X 8 SRAM MODULE, 5V, 100NS, 32 DIP, MIL-SCREENED - Bulk |
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