參數(shù)資料
型號(hào)： WS512K32V-20G2TMA
廠商： Electronic Theatre Controls, Inc.
元件分類： SRAM
英文描述： 512Kx32 SRAM 3.3V MODULE
中文描述： 512Kx32 SRAM的3.3模塊
文件頁數(shù)： 3/8頁
文件大?。?/td> 128K
代理商： WS512K32V-20G2TMA
3
White Electronic Designs Corporation (602) 437-1520 www.whiteedc.com
WS512K32V-XXX
CAPACITANCE
(T
A
= +25
°
C)
Parameter
OE capacitance
WE
1-4
capacitance
HIP (PGA)
CQFP G2T/G1U
CS
1-4
capacitance
Data I/O capacitance
Address input capacitance
This parameter is guaranteed by design but not tested.
Symbol
C
OE
C
WE
Conditions
V
IN
= 0 V, f = 1.0 MHz
V
IN
= 0 V, f = 1.0 MHz
Max
50
Unit
pF
pF
20
20
20
20
50
C
CS
C
I/O
C
AD
V
IN
= 0 V, f = 1.0 MHz
V
I/O
= 0 V, f = 1.0 MHz
V
IN
= 0 V, f = 1.0 MHz
pF
pF
pF
TRUTH TABLE
ABSOLUTE MAXIMUM RATINGS
Parameter
Operating Temperature
Storage Temperature
Signal Voltage Relative to GND
Junction Temperature
Supply Voltage
Symbol
T
A
T
STG
V
G
T
J
V
CC
Min
-55
-65
-0.5
Max
+125
+150
4.6
150
4.6
Unit
°
C
°
C
V
°
C
V
-0.5
CS
H
L
L
L
OE
X
L
X
H
WE
X
H
L
H
Mode
Standby
Read
Write
Out Disable
Data I/O
High Z
Data Out
Data In
High Z
Power
Standby
Active
Active
Active
RECOMMENDED OPERATING CONDITIONS
Parameter
Supply Voltage
Input High Voltage
Input Low Voltage
Symbol
V
CC
V
IH
V
IL
Min
3.0
2.2
-0.3
Max
3.6
Unit
V
V
V
V
CC
+ 0.3
+0.8
DC CHARACTERISTICS
(V
CC
= 3.3V
±
0.3V, T
A
= -55
°
C to +125
°
C)
Parameter
Sym
Conditions
Units
Min
Max
10
10
400
200
0.4
Input Leakage Current
Output Leakage Current
Operating Supply Current (x 32 Mode)
Standby Current
Output Low Voltage
Output High Voltage
NOTE: DC test conditions: V
IH
= V
CC
-0.3V, V
IL
= 0.3V.
NOTE: Contact factory for low power option.
I
LI
I
LO
V
IN
= GND to V
CC
CS = V
IH
, OE = V
IH
, V
OUT
= GND to V
CC
CS = V
IL
, OE = V
IH
, f = 5MHz, V
CC
= 3.6V
CS = V
IH
, OE = V
IH
, f = 5MHz, V
CC
= 3.6V
I
OL
= 4.0mA
I
OH
= -4.0mA
μ
A
μ
A
mA
mA
V
V
I
CC
x 32
I
SB
V
OL
V
OH
2.4
相關(guān)PDF資料
PDF描述
WS512K32V-20H1C 512Kx32 SRAM 3.3V MODULE
WS512K32V-20H1CA 512Kx32 SRAM 3.3V MODULE
WS512K32V-20H1I 512Kx32 SRAM 3.3V MODULE
WS512K32NV-15H1IA TVS Diode; Stand-Off Voltage, VRWM:5V; Breakdown Voltage, Vbr:6V; Peak Pulse Power PPK @ 8x20uS:500W; Capacitance, Cd:3pF; Package/Case:SOT-143; Breakdown Voltage Min:6V; Junction Capacitance:10pF; Leaded Process Compatible:No
WS512K32NV-15H1M 512Kx32 SRAM 3.3V MODULE
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
WS512K32V-20G2UC 制造商:Microsemi Corporation 功能描述:512K X 32 SRAM MODULE, 3.3V, 20NS, 68 CQFP 0.88" SQ., 0.140" - Bulk
WS512K32V-20G2UI 制造商:Microsemi Corporation 功能描述:512K X 32 SRAM MODULE, 3.3V, 20NS, 68 CQFP 0.88" SQ., 0.140" - Bulk
WS512K32V-20G2UIA 制造商:White Electronic Designs 功能描述:SRAM Module Asynchronous 16Mbit
WS512K32V-20G2UM 制造商:Microsemi Corporation 功能描述:512K X 32 SRAM MODULE, 3.3V, 20NS, 68 CQFP 0.88" SQ., 0.140" - Bulk
WS512K32V-20H1C 制造商:未知廠家 制造商全稱:未知廠家 功能描述:512Kx32 SRAM 3.3V MODULE
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