參數(shù)資料
型號: WS512K32BV-20E
英文描述: 512Kx32 3.3V SRAM Module(512Kx32, 3.3V,靜態(tài)RAM模塊(BiCOMS,存取時間20ns))
中文描述: 512Kx32 3.3靜態(tài)存儲器模塊(512Kx32,3.3伏,靜態(tài)內(nèi)存模塊(BiCOMS,存取時間為20ns))
文件頁數(shù): 8/8頁
文件大?。?/td> 170K
代理商: WS512K32BV-20E
8
White Microelectronics Phoenix, AZ (602) 437-1520
4
S
WS512K32BV-XXXE
ORDERING INFORMATION
LEAD FINISH:
Blank = Gold plated leads
A = Solder dip leads
E = Epitaxial Layer
DEVICE GRADE:
M= Military Screened
I = Industrial
C = Commercial
-55
°
C to +125
°
C
-40
°
C to +85
°
C
0
°
C to +70
°
C
PACKAGE TYPE:
H2 = Ceramic Hex-In-line Package, HIP (Package 402)
G2 = 22 mm Ceramic Quad Flat Pack, CQFP (Package 500)
ACCESS TIME (ns)
Low Voltage Supply 3.3V
±
10%
BiCMOS
IMPROVEMENT MARK:
N = No Connect at pin 21 and 39 in HIP for Upgrades
ORGANIZATION, 512Kx32
User configurable as 1Mx16 or 2Mx8
SRAM
WHITE MICROELECTRONICS
W S 512K 32 X B V - XXX X X E X
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