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參數(shù)資料
| 型號(hào)： | WS512K32-70G2TI |
| 英文描述： | 512Kx32 SRAM MODULE, SMD 5962-94611 |
| 中文描述： | 512Kx32 SRAM的模塊，貼片5962-94611 |
| 文件頁(yè)數(shù)： | 2/6頁(yè) |
| 文件大小： | 275K |
| 代理商： | WS512K32-70G2TI |
WS512K32-XXX
2
White Electronic Designs Corporation (602) 437-1520 www.wedc.com
White Electronic Designs
March 2005
Rev. 4
Parameter
Operating Temperature
Storage Temperature
Signal Voltage Relative to GND
Junction Temperature
Supply Voltage
Symbol
T
A
T
STG
V
G
T
J
V
CC
Min
-55
-65
-0.5
Max
+125
+150
V
CC
+0.5
150
7.0
Unit
°C
°C
V
°C
V
-0.5
TRUTH TABLE
RECOMMENDED OPERATING CONDITIONS
ABSOLUTE MAXIMUM RATINGS
Parameter
Supply Voltage
Input High Voltage
Input Low Voltage
Operating Temp (Mil)
Symbol
V
CC
V
IH
V
IL
T
A
Min
4.5
2.2
-0.5
-55
Max
5.5
Unit
V
V
V
°C
V
CC
+ 0.3
+0.8
+125
CAPACITANCE
T
A
= +25°C
Symbol Conditions
C
OE
C
WE
Parameter
OE# capacitance
WE#
1-4
capacitance
CQFP G2T
CS#
1-4
capacitance
Data I/O capacitance
Address input capacitance
This parameter is guaranteed by design but not tested.
Max Unit
50
15
V
IN
= 0 V, f = 1.0 MHz
V
IN
= 0 V, f = 1.0 MHz
pF
pF
C
CS
C
I/O
C
AD
V
IN
= 0 V, f = 1.0 MHz
V
I/O
= 0 V, f = 1.0 MHz
V
IN
= 0 V, f = 1.0 MHz
20
20
50
pF
pF
pF
Parameter
Input Leakage Current
Output Leakage Current
Operating Supply Current x 32 Mode
Standby Current
Output Low Voltage
Output High Voltage
NOTE: DC test conditions: V
IH
= V
CC
-0.3V, V
IL
= 0.3V
Symbol
I
LI
I
LO
I
CC
x 32
I
SB
V
OL
V
OH
Conditions
Min
Max
10
10
200
4.0
0.4
Units
μA
μA
mA
mA
V
V
V
CC
= 5.5, V
IN
= GND to V
CC
CS# = V
IH
, OE# = V
IH
, V
OUT
= GND to V
CC
CS# = V
IL
, OE# = V
IH
, f = 5MHz, V
CC
= 5.5
CS# = V
IH
, OE# = V
IH
, f = 5MHz, V
CC
= 5.5
I
OL
= 2.1mA, V
CC
= 4.5
I
OH
= -1.0mA, V
CC
= 4.5
2.4
DC CHARACTERISTICS
(V
CC
= 5.0V, V
SS
= 0V, T
A
= -55°C to +125°C)
DATA RETENTION CHARACTERISTICS
(T
A
= -55°C to +125°C)
Symbol
Conditions
V
DR
CS#
≥
V
CC
-0.2V
I
CCDR1
Parameter
Data Retention Supply Voltage
Data Retention Current
Min
2.0
Typ
Max
5.5
1.6
Units
V
mA
V
CC
= 3V
0.4
CS#
H
L
L
L
OE#
X
L
H
X
WE#
X
H
H
L
Mode
Standby
Read
Out Disable
Write
Data I/O
High Z
Data Out
High Z
Data In
Power
Standby
Active
Active
Active
LOW CAPACITANCE CQFP
T
A
= +25°C
Symbol
OE# capacitance
CQFP G4 capacitance
CS#1-4 capacitance
Data I/O capacitance
Address input capacitance
Parameter
Conditions
V
IN
= 0 V, f = 1.0 MHz
V
IN
= 0 V, f = 1.0 MHz
V
IN
= 0 V, f = 1.0 MHz
V
I/O
= 0 V, f = 1.0 MHz
V
IN
= 0 V, f = 1.0 MHz 32
Max Unit
32
32
15
15
C
OE
C
WE
C
CS
C
I/O
C
AD
pF
pF
pF
pF
pF
This parameter is guaranteed by design but not tested.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| WS512K32-70G2TIA | 制造商:WEDC 制造商全稱:White Electronic Designs Corporation 功能描述:512Kx32 SRAM MODULE, SMD 5962-94611 |
| WS512K32-70G2TM | 制造商:WEDC 制造商全稱:White Electronic Designs Corporation 功能描述:512Kx32 SRAM MODULE, SMD 5962-94611 |
| WS512K32-70G2TMA | 制造商:WEDC 制造商全稱:White Electronic Designs Corporation 功能描述:512Kx32 SRAM MODULE, SMD 5962-94611 |
| WS512K32-70G2TQ | 制造商:WEDC 制造商全稱:White Electronic Designs Corporation 功能描述:512Kx32 SRAM MODULE, SMD 5962-94611 |
| WS512K32-70G2TQA | 制造商:WEDC 制造商全稱:White Electronic Designs Corporation 功能描述:512Kx32 SRAM MODULE, SMD 5962-94611 |
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