參數(shù)資料
型號(hào)： WS512K32-70
英文描述： 512Kx32 SRAM Module(512Kx32靜態(tài)RAM模塊（存取時(shí)間70ns）)
中文描述： 512Kx32 SRAM的模塊（512Kx32靜態(tài)內(nèi)存模塊（存取時(shí)間70ns））
文件頁數(shù)： 4/12頁
文件大?。?/td> 153K
代理商： WS512K32-70
4
White Microelectronics Phoenix, AZ (602) 437-1520
4
S
Parameter
Symbol
Min
Max
Unit
°
C
°
C
V
°
C
V
Operating Temperature
T
A
-55
+125
Storage Temperature
T
STG
-65
+150
Signal Voltage Relative to GND
V
G
-0.5
Vcc+0.5
Junction Temperature
T
J
150
Supply Voltage
V
CC
-0.5
7.0
WS512K32-XXX
TRUTH TABLE
RECOMMENDED OPERATING CONDITIONS
ABSOLUTE MAXIMUM RATINGS
Parameter
Supply Voltage
Input High Voltage
Input Low Voltage
Operating Temp (Mil)
Symbol
V
CC
V
IH
V
IL
T
A
Min
4.5
2.2
-0.5
-55
Max
5.5
Unit
V
V
V
°
C
V
CC
+ 0.3
+0.8
+125
CAPACITANCE
(T
A
= +25
°
C)
Parameter
OE capacitance
Symbol
C
OE
Conditions
V
IN
= 0 V, f = 1.0 MHz
Max
50
Unit
pF
WE
1-4
capacitance
HIP (PGA)
CQFP G4
CQFP G2
CQFP G2T
C
WE
V
IN
= 0 V, f = 1.0 MHz
pF
20
50
20
15
CS
1-4
capacitance
C
CS
V
IN
= 0 V, f = 1.0 MHz
20
pF
Data I/O capacitance
C
I/O
V
I/O
= 0 V, f = 1.0 MHz
20
pF
Address input capacitance
C
AD
V
IN
= 0 V, f = 1.0 MHz
50
pF
This parameter is guaranteed by design but not tested.
Parameter
Symbol
Conditions
Units
Min
2.0
Typ
Max
5.5
Data Retention Supply Voltage
V
DR
CS
≥
V
CC
-0.2V
V
CC
= 3V
V
Data Retention Current
I
CCDR1
0.4
1.6
mA
DATA RETENTION CHARACTERISTICS
(T
A
= -55
°
C to +125
°
C)
DC CHARACTERISTICS
(V
CC
= 5.0V, V
SS
= 0V, T
A
= -55
°
C to +125
°
C)
Parameter
Symbol
Conditions
Units
Min
Max
10
10
200
4.0
0.4
Input Leakage Current
Output Leakage Current
Operating Supply Current x 32 Mode
Standby Current
Output Low Voltage
Output High Voltage
NOTE: DC test conditions: V
IH
= V
CC
-0.3V, V
IL
= 0.3V
I
LI
I
LO
V
CC
= 5.5, V
IN
= GND to V
CC
CS = V
IH
, OE = V
IH
, V
OUT
= GND to V
CC
CS = V
IL
, OE = V
IH
, f = 5MHz, Vcc = 5.5
CS = V
IH
, OE = V
IH
, f = 5MHz, Vcc = 5.5
I
OL
= 2.1mA, V
CC
= 4.5
I
OH
= -1.0mA, V
CC
= 4.5
μ
A
μ
A
mA
mA
V
V
I
CC x 32
I
SB
V
OL
V
OH
2.4
LOW CAPACITANCE CQFP
(T
A
= +25
°
C)
Parameter
OE capacitance
Symbol
C
OE
Conditions
V
IN
= 0 V, f = 1.0 MHz
Max
32
Unit
pF
CQFP G4 capacitance
C
WE
V
IN
= 0 V, f = 1.0 MHz
32
pF
CS
1-4
capacitance
C
CS
V
IN
= 0 V, f = 1.0 MHz
15
pF
Data I/O capacitance
C
I/O
V
I/O
= 0 V, f = 1.0 MHz
15
pF
Address input
capacitance
C
AD
V
IN
= 0 V, f = 1.0 MHz
32
pF
This parameter is guaranteed by design but not tested.
CS
H
L
L
L
OE
X
L
H
X
WE
X
H
H
L
Mode
Standby
Read
Out Disable
Write
Data I/O
High Z
Data Out
High Z
Data In
Power
Standby
Active
Active
Active
相關(guān)PDF資料
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
WS512K32-70G2I 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x32 SRAM Module
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WS512K32-70G2TC 制造商:WEDC 制造商全稱:White Electronic Designs Corporation 功能描述:512Kx32 SRAM MODULE, SMD 5962-94611
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