參數(shù)資料
型號: WS512K16-25FLIA
廠商: MICROSEMI CORP-PMG MICROELECTRONICS
元件分類: SRAM
英文描述: 512K X 16 MULTI DEVICE SRAM MODULE, 25 ns, CDFP44
封裝: CERAMIC, DFP-44
文件頁數(shù): 3/6頁
文件大?。?/td> 344K
代理商: WS512K16-25FLIA
3
White Electronic Designs Corporation (602) 437-1520 www.w
hiteedc.com
White Electronic Designs
WS512K16-XXX
April 1998
ADVANCED
White Electronic Designs Corp. reserves the right to change products or specications without notice.
I
Current Source
D.U.T.
C
= 50 pf
eff
I
OL
V
1.5V
(Bipolar Supply)
Z
Current Source
OH
AC CHARACTERISTICS
VCC = 5.0V, GND = 0V, -55°C ≤ TA ≤ +125°C
Parameter
Write Cycle
Symbol
-17
-20
-25
-35
Units
Min
Max
Min
Max
Min
Max
Min
Max
Write Cycle Time
tWC
17
20
25
35
ns
Chip Select to End of Write
tCW
14
17
20
25
ns
Address Valid to End of Write
tAW
14
17
20
25
ns
Data Valid to End of Write
tDW
10
12
15
20
ns
Write Pulse Width
tWP
14
17
20
25
ns
Address Setup Time
tAS
0000
ns
Address Hold Time
tAH
0000
ns
Output Active from End of Write
tOW1
0000
ns
Write Enable to Output in High Z
tWHZ1
9
101015
ns
Data Hold Time
tDH
0000
ns
LB#, UB# Valid to End of Write
tBW
14
17
20
25
ns
1. This parameter is guaranteed by design but not tested.
AC CHARACTERISTICS
VCC = 5.0V, GND = 0V, -55°C ≤ TA ≤ +125°C
Parameter
Read Cycle
Symbol
-17
-20
-25
-35
Units
Min
Max
Min
Max
Min
Max
Min
Max
Read Cycle Time
tRC
17
20
25
35
ns
Address Access Time
tAA
17
20
25
35
ns
Output Hold from Address Change
tOH
0000
ns
Chip Select Access Time
tACS
17
20
25
35
ns
Output Enable to Output Valid
tOE
10
12
15
20
ns
Chip Select to Output in Low Z
tCLZ1
2555
ns
Output Enable to Output in Low Z
tOLZ1
0000
ns
Chip Disable to Output in High Z
tCHZ1
9
101215
ns
Output Disable to Output in High Z
tOHZ1
9
101215
ns
LB#, UB# Access Time
tBA
10
12
14
17
ns
LB#, UB# Enable to Low Z Output
tBLZ1
0000
ns
LB#, UB# Disable to High Z Output
tBHZ1
9
101215
ns
1. This parameter is guaranteed by design but not tested.
AC TEST CIRCUIT
Notes:
VZ is programmable from -2V to +7V.
IOL & IOH programmable from 0 to 16mA.
Tester Impedance Z0 = 75.
VZ is typically the midpoint of VOH and VOL.
IOL & IOH are adjusted to simulate a typical resistive load circuit.
ATE tester includes jig capacitance.
AC Test Conditions
Parameter
Typ
Unit
Input Pulse Levels
VIL = 0, VIH = 3.0
V
Input Rise and Fall
5
ns
Input and Output Reference Level
1.5
V
Output Timing Reference Level
1.5
V
相關(guān)PDF資料
PDF描述
WV3EG216M64STSU335D4SG 32M X 64 DDR DRAM MODULE, 0.7 ns, DMA200
WV3HG2128M64EEU806D4MG 256M X 64 DDR DRAM MODULE, ZMA200
WPS128K32GV-15PJC 512K X 8 MULTI DEVICE SRAM MODULE, 15 ns, PQMA68
WMY32K36V-11TQIA 32K X 36 STANDARD SRAM, 11 ns, CQFP100
WF2M32B-120G2UI5 8M X 8 FLASH 5V PROM MODULE, 120 ns, CQFP68
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
WS512K16-25FLM 制造商:WEDC 制造商全稱:White Electronic Designs Corporation 功能描述:512Kx16 SRAM MODULE
WS512K16-25FLMA 制造商:WEDC 制造商全稱:White Electronic Designs Corporation 功能描述:512Kx16 SRAM MODULE
WS512K16-35DLC 制造商:WEDC 制造商全稱:White Electronic Designs Corporation 功能描述:512Kx16 SRAM MODULE
WS512K16-35DLCA 制造商:WEDC 制造商全稱:White Electronic Designs Corporation 功能描述:512Kx16 SRAM MODULE
WS512K16-35DLI 制造商:WEDC 制造商全稱:White Electronic Designs Corporation 功能描述:512Kx16 SRAM MODULE