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參數資料
| 型號： | WS27C010L-12DMB |
| 元件分類： | PROM |
| 英文描述： | 128K X 8 UVPROM, 120 ns, CDIP32 |
| 封裝： | CERDIP-32 |
| 文件頁數： | 1/5頁 |
| 文件大?。?/td> | 50K |
| 代理商： | WS27C010L-12DMB |
PRODUCT SELECTION GUIDE
PARAMETER
27C010L-90
27C010L-12
27C010L-15
27C010L-17
27C010L-20
Address Access Time (Max)
90 ns
120 ns
150 ns
170 ns
200 ns
Chip Select Time (Max)
90 ns
120 ns
150 ns
170 ns
200 ns
Output Enable Time (Max)
35 ns
40 ns
WS27C010L
TOP VIEW
Chip Carrier
CERDIP
PIN CONFIGURATION
4-25
Military 128K x 8 CMOS EPROM
KEY FEATURES
High Performance CMOS
DESC SMD No. 5962-89614
— 90 ns Access Time
Compatible with JEDEC 27010 and
Fast Programming
27C010 EPROMs
EPI Processing
JEDEC Standard Pin Configuration
— Latch-Up Immunity to 200 mA
— 32 Pin CERDIP Package
— ESD Protection Exceeds 2000 Volts
— 32 Pin Leadless Chip Carrier (CLLCC)
GENERAL DESCRIPTION
The WS27C010L is a performance oriented 1 Meg UV Erasable Electrically Programmable Read Only Memory
organized as 128K words x 8 bits/word. It is manufactured using an advanced CMOS technology which enables it to
operate at data access times as fast as 120 nsecs. The memory was designed utilizing WSI's patented self-aligned
split gate EPROM cell, resulting in a low power device with a very cost effective die size.
The WS27C010L 1 Meg EPROM provides extensive code store capacity for microprocessor, DSP, and
microcontroller-based systems. Its 120 nsec access time over the full Military temperature range provides the
potential of no-wait state operation. And where this parameter is important, the WS27C010L provides the user with
a very fast 35 nsec TOE output enable time.
The WS27C010L is offered in both a 32 pin 600 mil CERDIP, and a 32 pad Ceramic Leadless Chip Carrier
(CLLCC) for surface mount applications. Its standard JEDEC EPROM pinouts provide for automatic upgrade
density paths for existing 128K and 256K EPROM users.
A14
A13
A8
A9
A11
OE
A10
CE
O7
A7
A6
A5
A4
A3
A2
A1
A0
O0
A
12
A
15
A
16
V
PP
V
CC
PGM
NC
O1 O2
O3 O4 O5 O6
1
43
2
32 31 30
29
28
27
26
25
24
23
22
21
5
6
7
8
9
10
11
12
13
14 15 16 17 18 19 20
GND
VCC
PGM
NC
A14
A13
A8
A9
A11
OE
A10
CE
O7
O6
O5
O4
O3
VPP
A16
A15
A12
A7
A6
A5
A4
A3
A2
A1
A0
O0
O1
O2
GND
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
Return to Main Menu
相關PDF資料 |
PDF描述 |
|---|---|
| WS32K32N-35HM | 128K X 8 MULTI DEVICE SRAM MODULE, 35 ns, CHIP66 |
| WS512K32-45CJC | 2M X 8 MULTI DEVICE SRAM MODULE, 45 ns, QMA68 |
| WS512K32BV-15G2IE | 512K X 32 MULTI DEVICE SRAM MODULE, 15 ns, CQFP68 |
| WS57C256F-55D | 32K X 8 UVPROM, 55 ns, CDIP28 |
| WS57C256F-70T | 32K X 8 UVPROM, 70 ns, CDIP28 |
相關代理商/技術參數 |
參數描述 |
|---|---|
| WS27C010L-15CMB | 制造商:WSI 功能描述: |
| WS27C010L-15DMB | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:Military 128K x 8 CMOS EPROM |
| WS27C010L-17CMB | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:Military 128K x 8 CMOS EPROM |
| WS27C010L-17DMB | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:Military 128K x 8 CMOS EPROM |
| WS27C010L-20CMB | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:Military 128K x 8 CMOS EPROM |
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