參數(shù)資料
型號(hào)： WS256K32N-20G4MA
廠商： WHITE ELECTRONIC DESIGNS CORP
元件分類： SRAM
英文描述： 256K X 32 MULTI DEVICE SRAM MODULE, 20 ns, CQFP68
封裝： 40 MM, HERMETIC SEALED, CERAMIC, QFP-68
文件頁(yè)數(shù)： 3/7頁(yè)
文件大?。?/td> 173K
代理商： WS256K32N-20G4MA
3
White Electronic Designs Corporation (602) 437-1520 www.whiteedc.com
WS256K32-XXX
Parameter
Symbol
Min
Max
Unit
Operating Temperature
TA
-55
+125
°C
Storage Temperature
TSTG
-65
+150
°C
Signal Voltage Relative to GND
VG
-0.5
Vcc+0.5
V
Junction Temperature
TJ
150
°C
Supply Voltage
VCC
-0.5
7.0
V
TRUTH TABLE
RECOMMENDED OPERATING CONDITIONS
ABSOLUTE MAXIMUM RATINGS
Parameter
Symbol
Min
Max
Unit
Supply Voltage
VCC
4.5
5.5
V
Input High Voltage
VIH
2.2
VCC + 0.3
V
Input Low Voltage
VIL
-0.5
+0.8
V
Operating Temp (Mil)
TA
-55
+125
°C
CS
OE
WE
Mode
Data I/O
Power
H
X
Standby
High Z
Standby
L
H
Read
Data Out
Active
L
H
Out Disable
High Z
Active
L
X
L
Write
Data In
Active
CAPACITANCE
(TA = +25
°C)
Parameter
Symbol
Conditions
Max
Unit
OE capacitance
COE
VIN = 0 V, f = 1.0 MHz
28
pF
WE1-2 capacitance
CWE
VIN = 0 V, f = 1.0 MHz
pF
HIP (PGA)
20
CQFP G4
28
CS1-2 capacitance
CCS
VIN = 0 V, f = 1.0 MHz
20
pF
Data I/O capacitance
CI/O
VI/O = 0 V, f = 1.0 MHz
20
pF
Address input capacitance
CAD
VIN = 0 V, f = 1.0 MHz
28
pF
This parameter is guaranteed by design but not tested.
Parameter
Symbol
Conditions
Units
Min
Max
Input Leakage Current
ILI
VCC = 5.5, VIN = GND to VCC
10
A
Output Leakage Current
ILO
CS = VIH, OE = VIH, VOUT = GND to VCC
10
A
Operating Supply Current x 32 Mode
ICC x 32
CS = VIL, OE = VIH, f = 5MHz, Vcc = 5.5
550
mA
Standby Current
ISB
CS = VIH, OE = VIH, f = 5MHz, Vcc = 5.5
34
mA
Output Low Voltage
VOL
IOL = 8mA, Vcc = 4.5
0.4
V
Output High Voltage
VOH
IOH = -4.0mA, Vcc = 4.5
2.4
V
NOTE: DC test conditions: VIH = VCC -0.3V, VIL = 0.3V
DC CHARACTERISTICS
(VCC = 5.0V, GND = 0V, TA = -55
°C to +125°C)
LOW POWER DATA RETENTION CHARACTERISTICS
(WS256K32L-XXX ONLY)
(TA = -55
°C to +125°C)
Parameter
Symbol
Conditions
Units
Min
Typ
Max
Data Retention Supply Voltage
VDR
CS
≥ VCC -0.2V
2.0
5.5
V
Data Retention Current
ICCDR3
VCC = 3V
1.0
16
mA
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