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參數(shù)資料
| 型號： | WS1M8V-85CMA |
| 廠商： | MICROSEMI CORP-PMG MICROELECTRONICS |
| 元件分類： | SRAM |
| 英文描述： | 1M X 8 STANDARD SRAM, 85 ns, CDIP32 |
| 封裝： | 0.600 INCH, SINGLE CAVITY, HERMETIC SEALED, SIDE BRAZED, CERAMIC, DIP-32 |
| 文件頁數(shù)： | 3/5頁 |
| 文件大小： | 138K |
| 代理商： | WS1M8V-85CMA |
3
White Electronic Designs Corporation (602) 437-1520 www.whiteedc.com
WS1M8V-XCX
AC CHARACTERISTICS
(VCC = 3.3V, GND = 0V, TA = -55
°C to +125°C)
Parameter
Symbol
-70
-85
-100
Units
Read Cycle
Min
Max
Min
Max
Min
Max
Read Cycle Time
tRC
70
85
100
ns
Address Access Time
tAA
70
85
100
ns
Output Hold from Address Change
tOH
55
5
ns
Chip Select Access Time
tACS
70
85
100
ns
Chip Select to Output in Low Z
tCLZ1
55
5
ns
Chip Disable to Output in High Z
tCHZ1
25
ns
1. This parameter is guaranteed by design but not tested.
AC CHARACTERISTICS
(VCC = 3.3V, GND = 0V, TA = -55
°C to +125°C)
Parameter
Symbol
-70
-85
-100
Units
Write Cycle
Min
Max
Min
Max
Min
Max
Write Cycle Time
tWC
70
85
100
ns
Chip Select to End of Write
tCW
60
75
80
ns
Address Valid to End of Write
tAW
60
75
80
ns
Data Valid to End of Write
tDW
30
40
ns
Write Pulse Width
tWP
50
60
ns
Address Setup Time
tAS
00
0
ns
Address Hold Time
tAH
55
5
ns
Output Active from End of Write
tOW1
55
5
ns
Write Enable to Output in High Z
tWHZ1
25
35
ns
Data Hold Time
tDH
00
0
ns
1. This parameter is guaranteed by design but not tested.
I
Current Source
D.U.T.
C
= 50 pf
eff
I
OL
V
≈ 1.5V
(Bipolar Supply)
Z
Current Source
OH
NOTES:
VZ is programmable from -2V to +7V.
IOL & IOH programmable from 0 to 16mA.
Tester Impedance Z0 = 75
.
VZ is typically the midpoint of VOH and VOL.
IOL & IOH are adjusted to simulate a typical resistive load circuit.
ATE tester includes jig capacitance.
AC TEST CIRCUIT
AC TEST CONDITIONS
Parameter
Typ
Unit
Input Pulse Levels
VIL = 0, VIH = 2.5
V
Input Rise and Fall
5
ns
Input and Output Reference Level
1.5
V
Output Timing Reference Level
1.5
V
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| WS1M8V-XCX | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:2X512KX8 Dualithic SRAM Advanced |
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