參數(shù)資料
型號(hào)： WS1M8-XXX
英文描述： 2 x 512K x 8 Dualithic SRAM
中文描述： 2個(gè)為512k × 8 Dualithic的SRAM
文件頁(yè)數(shù)： 1/6頁(yè)
文件大小： 162K
代理商： WS1M8-XXX
1
White Electronic Designs Corporation (602) 437-1520 www.whiteedc.com
HI-RELIABILITY PRODUCT
WS1M8-XXX
2x512Kx8 DUALITHIC SRAM
FEATURES
I
Access Times 17, 20, 25, 35, 45, 55ns
I
Revolutionary, Center Power/Ground Pinout
I
Packaging:
32 pin, Hermetic Ceramic DIP (Package 300)
36 lead Ceramic SOJ (Package 100)
36 lead Ceramic Flatpack (Package 226)
October 2000 Rev. 4
36 CSOJ
36 FLATPACK
TOP VIEW
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
36
35
34
33
32
31
30
29
28
27
26
25
24
23
22
21
20
19
A0
A1
A2
A3
A4
CS1
I/O0
I/O1
V
CC
GND
I/O2
I/O3
WE
A5
A6
A7
A8
A9
NC
A18
A17
A16
A15
OE
I/O7
I/O6
GND
V
CC
I/O5
I/O4
A14
A13
A12
A11
A10
CS2
BLOCK DIAGRAM
512K x 8
512K x 8
A
0-18
OE
WE
CS
1
CS
2
I/O
0-7
(1)
(1)
PIN CONFIGURATION FOR WS1M8-XDJX
AND WS1M8-XFX
A
0-18
I/O
0-7
CS
1-2
OE
WE
V
CC
GND
Address Inputs
Data Input/Output
Chip Selects
Output Enable
Write Enable
+5.0V Power
Ground
PIN DESCRIPTION
NOTE:
1. CS
1
and CS
2
are used to select the lower and upper 512Kx8 of the device. CS
1
and CS
2
must not be enabled at the same time.
I
Organized as two banks of 512Kx8
I
Commercial, Industrial and Military Temperature Ranges
I
5 Volt Power Supply
I
Low Power CMOS
I
TTL Compatible Inputs and Outputs
PIN CONFIGURATION FOR WS1M8-XCX
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
A18
A16
A14
A12
A7
A6
A5
A4
A3
A2
A1
A0
I/O0
I/O1
I/O2
GND
V
CC
A15
A17
WE
A13
A8
A9
A11
CS2
A10
CS1
I/O7
I/O6
I/O5
I/O4
I/O3
32 DIP
TOP VIEW
BLOCK DIAGRAM
512K x 8
512K x 8
A
0-18
WE
CS
1
CS
2
I/O
0-7
(1)
(1)
A
0-18
I/O
0-7
CS
1-2
WE
V
CC
GND
Address Inputs
Data Input/Output
Chip Selects
Write Enable
+5.0V Power
Ground
PIN DESCRIPTION
相關(guān)PDF資料
PDF描述
WS1M8V-100CX 2x512Kx8 Dualithic SRAM(3.3V,2x512Kx8 Dualithic 靜態(tài)RAM（存取時(shí)間100ns）)
WS1M8V-70CX 2x512Kx8 Dualithic SRAM(3.3V,2x512Kx8 Dualithic 靜態(tài)RAM（存取時(shí)間70ns）)
WS1M8V-85CX 2x512Kx8 Dualithic SRAM(3.3V,2x512Kx8 Dualithic 靜態(tài)RAM（存取時(shí)間85ns）)
WS1M8V-25CX 2x512Kx8 Dualithic SRAM(3.3V,2x512Kx8 Dualithic 靜態(tài)RAM（存取時(shí)間25ns）)
WS1M8V-17CX 2x512Kx8 Dualithic SRAM(3.3V,2x512Kx8 Dualithic 靜態(tài)RAM（存取時(shí)間17ns）)
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