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參數(shù)資料
| 型號： | WS1M8-85CM |
| 廠商： | WHITE ELECTRONIC DESIGNS CORP |
| 元件分類： | SRAM |
| 英文描述： | 1M X 8 STANDARD SRAM, 85 ns, CDIP32 |
| 封裝： | 0.600 INCH, SIDE BRAZED, CERAMIC, DIP-32 |
| 文件頁數(shù)： | 2/5頁 |
| 文件大?。?/td> | 273K |
| 代理商： | WS1M8-85CM |
2
White Electronic Designs Corporation (602) 437-1520 www.whiteedc.com
White Electronic Designs
WS1M8-XCX
November 2002
Rev. 2
PRELIMINARY
White Electronic Designs Corp. reserves the right to change products or specications without notice.
ABSOLUTE MAXIMUM RATINGS
Parameter
Symbol
Min
Max
Unit
Operating Temperature
TA
-55
+125
°C
Storage Temperature
TSTG
-65
+150
°C
Signal Voltage Relative to GND
VG
-0.5
VCC+0.5
V
Junction Temperature
TJ
150
°C
Supply Voltage
VCC
-0.5
7.0
V
RECOMMENDED OPERATING CONDITIONS
Parameter
Symbol
Min
Max
Unit
Supply Voltage
VCC
4.5
5.5
V
Input High Voltage
VIH
2.2
VCC + 0.3
V
Input Low Voltage
VIL
-0.3
+0.8
V
Opertating Temp. (MIL)
TA
-55
+125
°C
TRUTH TABLE
CS#
WE#
Mode
Data I/O
Power
H
X
Standby
High Z
Standby
L
H
Read
Data Out
Active
L
Write
Data In
Active
CAPACITANCE
TA = +25°C
Parameter
Symbol
Conditions
Max Unit
Input capacitance
CIN
VIN = 0V, f = 1.0 MHz
28
pF
Output capacitance
COUT
VOUT = 0V, f = 1.0 MHz 28
pF
This parameter is guaranteed by design but not tested.
DC CHARACTERISTICS
VCC = 5.0V, VSS = 0V, -55°C ≤ TA ≤ +125°C
Parameter
Sym
Conditions
Min
Max
Units
Input Leakage Current
ILI
VCC = 5.5, VIN = GND to VCC
10
μA
Output Leakage Current
ILO1
CS# = VIH, VOUT = GND to VCC
10
μA
Operating Supply Current
ICC1
CS# = VIL, f = 5MHz, VCC = 5.5
55
mA
Standby Current
ISB1
CS# = VIH, f = 5MHz, VCC = 5.5
2
mA
Output Low Voltage
VOL
IOL = 2.1mA
0.4
V
Output High Voltage
VOH
IOH = -1.0mA
2.4
V
NOTE: DC test conditions: VIH = VCC -0.3V, VIL = 0.3V
1. OE# is internally tied to GND.
DATA RETENTION CHARACTERISTICS
-55°C ≤ TA ≤ +125°C
Characteristic
Sym
Conditions
Min
Typ
Max
Units
Data Retention Supply Voltage
VDR
CS# ≥ VCC -0.2V
2.0
5.5
V
Data Retention Current
ICCDR1
VCC = 3V
150
800*
μA
* Also available in Low Power version. Please call factory for informaion.
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