參數(shù)資料
型號(hào)： WS1M32-100G3IA
廠商： WHITE ELECTRONIC DESIGNS CORP
元件分類： SRAM
英文描述： 1M X 32 MULTI DEVICE SRAM MODULE, 100 ns, CQFP84
封裝： CERAMIC, QFP-84
文件頁數(shù)： 2/6頁
文件大小： 329K
代理商： WS1M32-100G3IA
WS1M32-XG3X
2
White Electronic Designs Corporation (602) 437-1520 www.whiteedc.com
White Electronic Designs
White Electronic Designs Corp. reserves the right to change products or specications without notice.
February, 2001
Rev. 5
PRELIMINARY
TRUTH TABLE
CS1# CS2# OE# WE#
Mode
Data I/O
Power
H
X
Standby
High Z
Standby
L
H
L
H
Read
Data Out
Active
L
H
Out Disable
High Z
Active
L
H
X
L
Write
Data In
Active
H
L
H
Read
Data Out
Active
H
L
H
Out Disable
High Z
Active
H
L
X
L
Write
Data In
Active
L
X
Invalid State
Invalid State Invalid State
ABSOLUTE MAXIMUM RATINGS
Parameter
Symbol
Min
Max
Unit
Operating Temperature
TA
-40
+85
°C
Storage Temperature
TSTG
-65
+150
°C
Signal Voltage Relative to GND
VG
-0.5
VCC +0.5
V
Junction Temperature
TJ
150
°C
Supply Voltage
VCC
-0.5
4.6
V
RECOMMENDED OPERATING CONDITIONS
Parameter
Symbol
Min
Max
Unit
Supply Voltage
VCC
3.0
3.6
V
Input High Voltage
VIH
2.2
VCC + 0.3
V
Input Low Voltage
VIL
-0.3
+0.8
V
Operating Temperature (Ind.)
TA
-40
+85
°C
DC CHARACTERISTICS
VCC = 3.3V ± 0.3V, -55°C ≤ TA ≤ +125°C
Parameter
Symbol
Conditions
Min
Max
Units
Input Leakage Current
ILI
VCC = 5.5, VIN = GND to VCC
10
μA
Output Leakage Current
ILO
CS# = VIH, OE# = VIH, VOUT = GND to VCC
10
μA
Operating Supply Current x 32 Mode
ICC x 32
CS# = VIL, OE# = VIH, f = 5MHz, VCC = 5.5
220
mA
Standby Current
ISB
CS# = VIH, OE# = VIH, f = 5MHz, VCC = 5.5
10
mA
Standby Current (Low Power)
ISB2
CS# = VIH, OE# = VIH, f = 5MHz, VCC = 5.5
900
μA
Output Low Voltage
VOL
IOL = 8mA, VCC = 4.5
0.4
V
Output High Voltage
VOH
IOH = -4.0mA, VCC = 4.5
2.4
V
NOTE: DC test conditions: VIH = VCC -0.3V, VIL = 0.3V
CAPACITANCE
TA = +25°C
Parameter
Symbol
Conditions
Max Unit
OE#1-4 capacitance
COE
VIN = 0V, f = 1.0MHz
30
pF
WE#1-4 capacitance
CWE
VIN = 0V, f = 1.0MHz
30
pF
CS#1-2 capacitance
CCS
VIN = 0V, f = 1.0MHz
30
pF
Data I/O capacitance
CI/O
VI/O = 0V, f = 1.0MHz
30
pF
Address input capacitance
CAD
VIN = 0V, f = 1.0MHz
100 pF
This parameter is guaranteed by design, but not tested.
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