參數(shù)資料
型號: WS128K48-35G4WX
英文描述: 128Kx48 SRAM Module(128Kx48,靜態(tài)RAM模塊(存取時間35ns))
中文描述: 128Kx48 SRAM的模塊(128Kx48,靜態(tài)內(nèi)存模塊(存取時間為35ns))
文件頁數(shù): 2/5頁
文件大?。?/td> 78K
代理商: WS128K48-35G4WX
2
White Microelectronics Phoenix, AZ (602) 437-1520
WS128K48-XG4WX
TRUTH TABLE
ABSOLUTE MAXIMUM RATINGS
Parameter
Symbol
Min
Max
Unit
°
C
°
C
V
°
C
V
Operating Temperature
T
A
-55
+125
Storage Temperature
T
STG
-65
+150
Signal Voltage Relative to GND
V
G
-0.5
Vcc+0.5
Junction Temperature
T
J
150
Supply Voltage
V
CC
-0.5
7.0
CS
H
L
L
L
OE
X
L
X
H
WE
X
H
L
H
Mode
Standby
Read
Write
Out Disable
Data I/O
High Z
Data Out
Data In
High Z
Power
Standby
Active
Active
Active
RECOMMENDED OPERATING CONDITIONS
Parameter
Supply Voltage
Input High Voltage
Input Low Voltage
Operating Temp. (Mil.)
Symbol
V
CC
V
IH
V
IL
T
A
Min
4.5
2.2
-0.3
-55
Max
5.5
Unit
V
V
V
°
C
V
CC
+ 0.3
+0.8
+125
DC CHARACTERISTICS
(V
CC
= 5.0V, T
A
= -55
°
C to +125
°
C)
I
Current Source
D.U.T.
C = 50 pf
I
OL
V
1.5V
(Bipolar Supply)
Z
Current Source
OH
NOTES:
V
Z
is programmable from-2V to +7V.
I
OL
& I
OH
programmable from0 to 16mA.
Tester Impedance Z
0
= 75
.
V
Z
is typically the mdpoint of V
OH
and V
OL
.
I
OL
& I
OH
are adjusted to simulate a typical resistive load circuit.
ATE tester includes jig capacitance.
AC TEST CIRCUIT
AC TEST CONDITIONS
Parameter
Input Pulse Levels
Input Rise and Fall
Input and Output Reference Level
Output Timing Reference Level
Typ
Unit
V
ns
V
V
V
IL
= 0, V
IH
= 3.0
5
1.5
1.5
Parameter
Sym
Conditions
-17
-20
-25
-35
Units
Min
Max
10
10
720
120
0.4
Min
Max
10
10
720
120
0.4
Min
Max
10
10
720
90
0.4
Min
Max
10
10
720
90
0.4
Input Leakage Current
Output Leakage Current
Operating Supply Current
Standby Current
Output Low Voltage
Output High Voltage
NOTE: DC test conditions: V
IH
= V
CC
-0.3V, V
IL
= 0.3V
I
LI
I
LO
I
CC
I
SB
V
OL
V
OH
V
CC
= 5.5, V
IN
= GND to V
CC
CS = V
IH
, OE = V
IH
, V
OUT
= GND to V
CC
CS = V
IL
, OE = V
IH
, f = 5MHz, Vcc = 5.5
CS = V
IH
, OE = V
IH
, f = 5MHz, Vcc = 5.5
I
OL
= 8mA, V
CC
= 4.5
I
OH
= -4.0mA, V
CC
= 4.5
μ
A
μ
A
mA
mA
V
V
2.4
2.4
2.4
2.4
CAPACITANCE
(T
A
= +25
°
C)
Parameter
OE capacitance
Symbol
C
OE
Conditions
V
IN
= 0 V, f = 1.0 MHz
Max
100
Unit
pF
WE capacitance
CS capacitance
C
WE
C
CS
V
IN
= 0 V, f = 1.0 MHz
V
IN
= 0 V, f = 1.0 MHz
20
20
pF
pF
Data I/O capacitance
C
I/O
V
I/O
= 0 V, f = 1.0 MHz
20
pF
Address input capacitance
C
AD
V
IN
= 0 V, f = 1.0 MHz
100
pF
This parameter is guaranteed by design but not tested.
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