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參數(shù)資料
| 型號(hào)： | WS128K32V-20G2UM |
| 廠商： | MICROSEMI CORP-PMG MICROELECTRONICS |
| 元件分類： | SRAM |
| 英文描述： | 128K X 32 MULTI DEVICE SRAM MODULE, 20 ns, CQFP68 |
| 封裝： | 22.40 X 22.40 MM, CERAMIC, QFP-68 |
| 文件頁(yè)數(shù)： | 3/8頁(yè) |
| 文件大?。?/td> | 462K |
| 代理商： | WS128K32V-20G2UM |
3
White Electronic Designs Corporation (602) 437-1520 www.whiteedc.com
White Electronic Designs
WS128K32V-XXX
March 2006
Rev. 8
TRUTH TABLE
CS
OE
WE
Mode
Data I/O
Power
H
X
Standby
High Z
Standby
L
H
Read
Data Out
Active
L
X
L
Write
Data In
Active
L
H
Out Disable
High Z
Active
ABSOLUTE MAXIMUM RATINGS
Parameter
Symbol
Min
Max
Unit
Operating Temperature
TA
-55
+125
°C
Storage Temperature
TSTG
-65
+150
°C
Signal Voltage Relative to GND
VG
-0.5
4.6
V
Junction Temperature
TJ
150
°C
Supply Voltage
VCC
-0.5
5.5
V
RECOMMENDED OPERATING CONDITIONS
Parameter
Symbol
Min
Max
Unit
Supply Voltage
VCC
3.0
3.6
V
Input High Voltage
VIH
2.2
VCC + 0.3
V
Input Low Voltage
VIL
-0.3
+0.8
V
CAPACITANCE
TA = +25°C, VIN = 0V, F = 1.0 MHz
Parameter
Symbol
Max
Unit
OE# capacitance
COE
50
pF
WE1-4# capacitance
HIP (PGA)
CWE
20
pF
CQFP G2U
15
CS1-4# capacitance
CCS
20
pF
Data# I/O capacitance
CI/O
20
pF
Address input capacitance
CAD
50
pF
This parameter is guaranteed by design but not tested.
DC CHARACTERISTICS
VCC = 3.3V ±0.3V, VSS = 0V, -55°C ≤ TA ≤ +125°C
Parameter
Sym
Conditions
Min
Max
Units
Input Leakage Current
ILI
VIN = GND to VCC
10
μA
Output Leakage Current
ILO
CS# = VIH, OE# = VIH, VOUT = GND to VCC
10
μA
Operating Supply Current
ICC x 32
CS# = VIL, OE# = VIH, f = 5MHz
500
mA
Standby Current
ISB
CS# = VIH, OE# = VIH, f = 5MHz
32
mA
Output Low Voltage
VOL
IOL = 6mA
0.4
V
Output High Voltage
VOH
IOH = -4.0mA
2.4
V
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| WS128K32V-20H1C | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:128Kx32 3.3V SRAM MULTICHIP PACKAGE |
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| WS128K32V-20H1I | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:128Kx32 3.3V SRAM MULTICHIP PACKAGE |
| WS128K32V-20H1IA | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:128Kx32 3.3V SRAM MULTICHIP PACKAGE |
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