參數(shù)資料
型號: WS128K32V-17
英文描述: 128Kx32 3.3V SRAM Module(128Kx32 ,3.3V,靜態(tài)RAM模塊(存取時間17ns))
中文描述: 128Kx32 3.3靜態(tài)存儲器模塊(128Kx32,3.3伏,靜態(tài)內(nèi)存模塊(存取時間17ns))
文件頁數(shù): 3/8頁
文件大?。?/td> 95K
代理商: WS128K32V-17
White Microelectronics Phoenix, AZ (602) 437-1520
4
S
3
WS128K32V-XXX
CAPACITANCE
(T
A
= +25
°
C)
Parameter
OE capacitance
Symbol
C
OE
Conditions
V
IN
= 0 V, f = 1.0 MHz
Max
50
Unit
pF
WE
1-4
capacitance
HIP (PGA)
CQFP G2T
C
WE
V
IN
= 0 V, f = 1.0 MHz
pF
20
20
CS
1-4
capacitance
C
CS
V
IN
= 0 V, f = 1.0 MHz
20
pF
Data I/O capacitance
C
I/O
V
I/O
= 0 V, f = 1.0 MHz
20
pF
Address input capacitance
C
AD
V
IN
= 0 V, f = 1.0 MHz
50
pF
This parameter is guaranteed by design but not tested.
TRUTH TABLE
ABSOLUTE MAXIMUM RATINGS
Parameter
Symbol
Min
Max
Unit
°
C
°
C
V
°
C
V
Operating Temperature
T
A
-55
+125
Storage Temperature
T
STG
-65
+150
Signal Voltage Relative to GND
V
G
-0.5
4.6
Junction Temperature
T
J
150
Supply Voltage
V
CC
-0.5
5.5
CS
H
L
L
L
OE
X
L
X
H
WE
X
H
L
H
Mode
Standby
Read
Write
Out Disable
Data I/O
High Z
Data Out
Data In
High Z
Power
Standby
Active
Active
Active
RECOMMENDED OPERATING CONDITIONS
Parameter
Supply Voltage
Input High Voltage
Input Low Voltage
Symbol
V
CC
V
IH
V
IL
Min
3.0
2.2
-0.3
Max
3.6
Unit
V
V
V
V
CC
+ 0.3
+0.8
DC CHARACTERISTICS
(V
CC
= 3.3V
±
0.3V, V
SS
= 0V, T
A
= -55
°
C to +125
°
C)
Parameter
Sym
Conditions
Units
Min
Max
10
10
500
32
0.4
Input Leakage Current
Output Leakage Current
Operating Supply Current (x 32 Mode)
Standby Current
Output Low Voltage
Output High Voltage
I
LI
I
LO
V
IN
= GND to V
CC
CS = V
IH
, OE = V
IH
, V
OUT
= GND to V
CC
CS = V
IL
, OE = V
IH
, f = 5MHz
CS = V
IH
, OE = V
IH
, f = 5MHz
I
OL
= 8mA
I
OH
= -4.0mA
μ
A
μ
A
mA
mA
V
V
I
CC
x 32
I
SB
V
OL
V
OH
2.4
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