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參數(shù)資料
| 型號(hào)： | WS128K32N-45G2TMEA |
| 廠商： | WHITE ELECTRONIC DESIGNS CORP |
| 元件分類： | SRAM |
| 英文描述： | 128K X 32 MULTI DEVICE SRAM MODULE, 45 ns, CQFP68 |
| 封裝： | 22.4 X 22.4 MM, CERAMIC, QFP-68 |
| 文件頁(yè)數(shù)： | 2/6頁(yè) |
| 文件大小： | 383K |
| 代理商： | WS128K32N-45G2TMEA |
2
White Electronic Designs Corporation (602) 437-1520 www.whiteedc.com
White Electronic Designs
WS128K32-XG2TXE
December 2000
Rev. 0
ADVANCED
ABSOLUTE MAXIMUM RATINGS
Parameter
Symbol
Min
Max
Unit
Operating Temperature
TA
-55
+125
°C
Storage Temperature
TSTG
-65
+150
°C
Signal Voltage Relative to GND
VG
-0.5
VCC+0.5
V
Junction Temperature
TJ
150
°C
Supply Voltage
VCC
-0.5
7.0
V
RECOMMENDED OPERATING CONDITIONS
Parameter
Symbol
Min
Max
Unit
Supply Voltage
VCC
4.5
5.5
V
Input High Voltage
VIH
2.2
VCC + 0.3
V
Input Low Voltage
VIL
-0.3
+0.8
V
Opertating Temp. (MIL)
TA
-55
+125
°C
TRUTH TABLE
CS#
OE#
WE#
Mode
Data I/O
Power
H
X
Standby
High Z
Standby
L
H
Read
Data Out
Active
L
X
L
Write
Data In
Active
L
H
Out Disable
High Z
Active
CAPACITANCE
TA = +25°C
Parameter
Symbol
Conditions
Max Unit
OE# capacitance
COE
VIN = 0V, f = 1.0 MHz
50
pF
WE1-4# capacitance
CQFP G2T
CWE
VIN = 0V, f = 1.0 MHz
20
pF
CS1-4# capacitance
CCS
VIN = 0V, f = 1.0 MHz
20
pF
Data# I/O capacitance
CI/O
VI/O = 0V, f = 1.0 MHz
20
pF
Address input capacitance
CAD
VIN = 0V, f = 1.0 MHz
50
pF
This parameter is guaranteed by design but not tested.
DC CHARACTERISTICS
VCC = 5.0V, VSS = 0V, -55°C ≤ TA ≤ +125°C
Parameter
Sym
Conditions
Min
Max
Units
Input Leakage Current
ILI
VCC = 5.5, VIN = GND to VCC
10
μA
Output Leakage Current
ILO
CS# = VIH, OE# = VIH, VOUT = GND to VCC
10
μA
Operating Supply Current
ICC
CS# = VIL, OE# = VIH, f = 5MHz, VCC = 5.5
520
mA
Standby Current
ISB
CS# = VIH, OE# = VIH, f = 5MHz, VCC = 5.5
8
mA
Output Low Voltage
VOL
IOL = 8mA, VCC = 4.5
0.4
V
Output High Voltage
VOH
IOH = -40mA, VCC = 4.5
2.4
V
NOTE: DC test conditions: VIH = VCC -0.3V, VIL = 0.3V
DATA RETENTION CHARACTERISTICS
-55°C ≤ TA ≤ +125°C
Characteristic
Sym
Conditions
Min
Max
Units
Data Retention Voltage
Data Retention Quiescent Current
VCC
ICCDR
VCC = 2.0V
CS ≥ VCC -0.2V
2
—
1
V
mA
Chip Disable to Data Retention Time (1)
Operation Recovery Time (1)
TCDR
TR
VIN ≥ VCC -0.2V
or VIN ≤ 0.2V
0
TRC
—
ns
NOTE: Parameter guaranteed, but not tested.
RADIATION CHARACTERISTICS
Total Dose (TM1019.5)
Latch-up
25°C
VCC Max
(MeV/mg/cm2)
SEU LET
Threshold
(VCC MIN)
(MeV/mg/cm2)
Cross
Section
/BIT
(E-6 cm2)
Functional
Parametric
(Krads)
Typical Iccsb (mA
)
30
1.2
>100
2
0.2
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| WS128K32N-45G2TQE | 制造商:WEDC 制造商全稱:White Electronic Designs Corporation 功能描述:128Kx32 SRAM MULTICHIP PACKAGE, RADIATION TOLLERANT |
| WS128K32N-45G2TQEA | 制造商:WEDC 制造商全稱:White Electronic Designs Corporation 功能描述:128Kx32 SRAM MULTICHIP PACKAGE, RADIATION TOLLERANT |
| WS128K32N-45H1C | 制造商:Microsemi Corporation 功能描述:128K X 32 SRAM MODULE, 5V, 45NS, NO CONNECT, 66 PGA 1.075" S - Bulk |
| WS128K32N-45H1I | 制造商:Microsemi Corporation 功能描述:128K X 32 SRAM MODULE, 5V, 45NS, NO CONNECT, 66 PGA 1.075" S - Bulk |
| WS128K32N-45H1M | 制造商:Microsemi Corporation 功能描述:128K X 32 SRAM MODULE, 5V, 45NS, NO CONNECT, 66 PGA 1.075" S - Bulk |
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