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參數(shù)資料
| 型號： | WS128K32N-35G2LC |
| 廠商： | WHITE ELECTRONIC DESIGNS CORP |
| 元件分類： | SRAM |
| 英文描述： | 128K X 32 MULTI DEVICE SRAM MODULE, 35 ns, CQFP68 |
| 封裝： | 22.36 X 22.36 MM, CERAMIC, QFP-68 |
| 文件頁數(shù)： | 3/9頁 |
| 文件大?。?/td> | 546K |
| 代理商： | WS128K32N-35G2LC |
3
White Electronic Designs Corporation (602) 437-1520 www.whiteedc.com
White Electronic Designs
WS128K32-XXX
May 2006
Rev. 17
DC CHARACTERISTICS
VCC = 5.0V, VSS = 0V, -55°C ≤ TA ≤ +125°C
Parameter
Sym
Conditions
-15
-17
-20
-25
Units
Min
Max
Min
Max
Min
Max
Min
Max
Input Leakage Current
ILI
VCC = 5.5, VIN = GND to VCC
10
μA
Output Leakage Current
ILO
CS# = VIH, OE# = VIH, VOUT = GND to VCC
10
μA
Operating Supply Current
ICC
CS# = VIL, OE# = VIH, f = 5MHz, VCC = 5.5
600
mA
Standby Current
ISB
CS# = VIH, OE# = VIH, f = 5MHz, VCC = 5.5
80
60
mA
Output Low Voltage
VOL
IOL = 8mA, VCC = 4.5
0.4
V
Output High Voltage
VOH
IOH = -4.0mA, VCC = 4.5
2.4
V
Characteristic
Sym
Conditions
Min
Typ
Max
Units
Data Retention Voltage
Data Retention Quiescent Current
VCC
ICCDR
VCC = 2.0V
CS VCC -0.2V
2
-
1
-
2
V
mA
Chip Disable to Data Retention Time (1)
Operation Recovery Time (1)
TCDR
TR
VIN VCC -0.2V
or VIN 0.2V
0
TRC
--
-
ns
NOTE: Parameter guaranteed, but not tested.
DATA RETENTION CHARACTERISTICS (For WS128K32L-XXX Only)
-55°C ≤ TA ≤ +125°C, -40°C ≤ TA ≤ +85°C
Parameter
Symbol
Min
Max
Unit
Operating Temperature
TA
-55
+125
°C
Storage Temperature
TSTG
-65
+150
°C
Signal Voltage Relative to GND
VG
-0.5
VCC+0.5
V
Junction Temperature
TJ
150
°C
Supply Voltage
VCC
-0.5
7.0
V
TRUTH TABLE
ABSOLUTE MAXIMUM RATINGS
RECOMMENDED OPERATING CONDITIONS
Parameter
Symbol
Min
Max
Unit
Supply Voltage
VCC
4.5
5.5
V
Input High Voltage
VIH
2.2
VCC + 0.3
V
Input Low Voltage
VIL
-0.5
+0.8
V
Operating Temp (Mil)
TA
-55
+125
°C
CS
OE
WE
Mode
Data I/O
Power
H
X
Standby
High Z
Standby
L
H
Read
Data Out
Active
L
X
L
Write
Data In
Active
L
H
Out Disable
High Z
Active
CAPACITANCE
TA = +25°C
Parameter
Symbol
Conditions
Max Unit
OE# capacitance
COE
VIN = 0V, f = 1.0 MHz
50
pF
WE1-4# capacitance
HIP (PGA) H1
CWE
VIN = 0V, f = 1.0 MHz
20
pF
CQFP G4T
50
CQFP G2U/G2L
20
CS1-4# capacitance
CCS
VIN = 0V, f = 1.0 MHz
20
pF
Data# I/O capacitance
CI/O
VI/O = 0V, f = 1.0 MHz
20
pF
Address input capacitance
CAD
VIN = 0V, f = 1.0 MHz
50
pF
This parameter is guaranteed by design but not tested.
Parameter
Sym
Conditions
-35
-45
-55
Units
Min
Max
Min
Max
Min
Max
Input Leakage Current
ILI
VCC = 5.5, VIN = GND to VCC
10
μA
Output Leakage Current
ILO
CS# = VIH, OE# = VIH, VOUT = GND to VCC
10
μA
Operating Supply Current
ICC
CS# = VIL, OE# = VIH, f = 5MHz, VCC = 5.5
600
mA
Standby Current
ISB
CS# = VIH, OE# = VIH, f = 5MHz, VCC = 5.5
60
mA
Output Low Voltage
VOL
IOL = 8mA, VCC = 4.5
0.4
V
Output High Voltage
VOH
IOH = -4.0mA, VCC = 4.5
2.4
V
NOTE: DC test conditions: VIH = VCC -0.3V, VIL = 0.3V
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| WS128K32N-35G2TCE | 制造商:WEDC 制造商全稱:White Electronic Designs Corporation 功能描述:128Kx32 SRAM MULTICHIP PACKAGE, RADIATION TOLLERANT |
| WS128K32N-35G2TCEA | 制造商:WEDC 制造商全稱:White Electronic Designs Corporation 功能描述:128Kx32 SRAM MULTICHIP PACKAGE, RADIATION TOLLERANT |
| WS128K32N-35G2TIE | 制造商:WEDC 制造商全稱:White Electronic Designs Corporation 功能描述:128Kx32 SRAM MULTICHIP PACKAGE, RADIATION TOLLERANT |
| WS128K32N-35G2TIEA | 制造商:WEDC 制造商全稱:White Electronic Designs Corporation 功能描述:128Kx32 SRAM MULTICHIP PACKAGE, RADIATION TOLLERANT |
| WS128K32N-35G2TME | 制造商:WEDC 制造商全稱:White Electronic Designs Corporation 功能描述:128Kx32 SRAM MULTICHIP PACKAGE, RADIATION TOLLERANT |
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