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參數(shù)資料
| 型號(hào)： | WS128K32-25G2SMX |
| 英文描述： | 128Kx32 Radiation Hardened SRAM Module(128Kx32抗輻射靜態(tài)RAM模塊) |
| 中文描述： | 128Kx32抗輻射的SRAM模塊（128Kx32抗輻射靜態(tài)內(nèi)存模塊） |
| 文件頁數(shù)： | 1/6頁 |
| 文件大?。?/td> | 147K |
| 代理商： | WS128K32-25G2SMX |
White Microelectronics Phoenix, AZ (602) 437-1520
4
S
1
WS128K32-25G2SMX
128Kx32 Radiation Hardened SRAM MODULE
ADVANCED*
I
Organized as 128Kx32; User Configurable as 256Kx16 or
512Kx8
I
Military Temperature Range
I
5 Volt Power Supply
I
Low Power CMOS
I
TTL Compatible Inputs and Outputs
I
Built in Decoupling Caps and Multiple Ground Pins for Low
Noise Operation
*This data sheet describes a product that may or may not be under
development and is subject to change or cancellation without notice.
FEATURES
I
Access Time of 25ns
I
Radiation Tolerant
Total Dose Hardness through 1x10
6
rad (SiO
2
)
I
Neutron Hardness through 1x10
14
cm
-2
I
Dynamic and Static Transient Upset Hardness through
1x10
11
rad (Si)/s
I
Dose Rate Survivability through < 1x10
12
rad (Si)/s
I
Soft Error Rate of < 1x10
-10
upsets/bit-day in Geosynchro-
nous Orbit
I
No Latchup
I
Packaging:
68 lead, Hermetic CQFP (G2S), 7.62mm (0.300") height
(Package 515). Designed to fit JEDEC 68 lead 0.990” CQFJ
footprint.
July 1998
128K x 8
8
I/O
0-7
CS
1
1
128K x 8
8
I/O
8-15
2
128K x 8
8
I/O
16-23
3
128K x 8
8
I/O
24-31
4
A
0-16
OE
WE
CS
2
WE
CS
3
WE
CS
4
WE
BLOCK DIAGRAM
FIG.1
PIN CONFIGURATION FOR WS128K32-25G2SMX
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
60
59
58
57
56
55
54
53
52
51
50
49
48
47
46
45
44
9 8 7 6 5 4 3 2 1 68 67 66 65 64 63 62 61
27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43
I/O
0
I/O
1
I/O
2
I/O
3
I/O
4
I/O
5
I/O
6
I/O
7
GND
I/O
8
I/O
9
I/O
10
I/O
11
I/O
12
I/O
13
I/O
14
I/O
15
V
C
A
1
A
1
A
1
A
1
A
1
A
1
C
1
O
C
2
N
W
2
W
3
W
4
N
N
N
I/O
16
I/O
17
I/O
18
I/O
19
I/O
20
I/O
21
I/O
22
I/O
23
GND
I/O
24
I/O
25
I/O
26
I/O
27
I/O
28
I/O
29
I/O
30
I/O
31
N
A
0
A
1
A
2
A
3
A
4
A
5
C
3
G
C
4
W
1
A
6
A
7
A
8
A
9
A
1
V
C
TOP VIEW
PIN DESCRIPTION
I/O
0-31
Data Inputs/Outputs
A
0-16
Address Inputs
WE
1-4
Write Enables
CS
1-4
Chip Selects
OE
Output Enable
V
CC
Power Supply
GND
Ground
NC
Not Connected
The White 68 lead G2S CQFP
fills the same fit and function as
the JEDEC 68 lead CQFJ or 68
PLCC. But the G2S has the TCE
and lead inspection advantage
of the CQFP form.
0.940"
相關(guān)PDF資料 |
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| WS128K32-XG2TXE | 128Kx32 SRAM Multichip Package, Radiation Tolerant(128Kx32靜態(tài)RAM允許輻射(多種封裝）) |
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| WS128K32N-120G4TQA | 128Kx32 SRAM MODULE, SMD 5962-93187 |
| WS128K32N-70G2UC | 128Kx32 SRAM MODULE, SMD 5962-93187 |
| WS128K32N-70G2UCA | 128Kx32 SRAM MODULE, SMD 5962-93187 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| WS128K32-25G2TC | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x32 SRAM Module |
| WS128K32-25G2TI | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x32 SRAM Module |
| WS128K32-25G2TM | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x32 SRAM Module |
| WS128K32-25G2TQ | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x32 SRAM Module |
| WS128K32-25G2UC | 制造商:Microsemi Corporation 功能描述:128K X 32 SRAM MODULE, 5V, 25NS, 68 CQFP 0.88" SQ., 0.140" H - Bulk |
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