- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄140363 > WMS512K8V-20CLIA (WHITE ELECTRONIC DESIGNS CORP) 512K X 8 STANDARD SRAM, 20 ns, CQCC32 PDF資料下載
參數(shù)資料
| 型號： | WMS512K8V-20CLIA |
| 廠商： | WHITE ELECTRONIC DESIGNS CORP |
| 元件分類： | SRAM |
| 英文描述： | 512K X 8 STANDARD SRAM, 20 ns, CQCC32 |
| 封裝： | CERAMIC, LCC-32 |
| 文件頁數(shù)： | 2/9頁 |
| 文件大小： | 323K |
| 代理商： | WMS512K8V-20CLIA |
2
White Electronic Designs Corporation (602) 437-1520 www.whiteedc.com
White Electronic Designs
WMS512K8V-XXX
October 2004
Rev. 8
DC CHARACTERISTICS - CMOS COMPATIBLE
VCC = 5.0V, GND = 0V, -55°C ≤TA ≤ 125°C
Parameter
Symbol
Conditions
Min
Max
Unit
Input Leakage Current
ILI
VCC = 3.6, VIN = GND to VCC
10
μA
Output Leakage Current
ILO
CS# = VIH, OE# = VIH, VOUT = GND to VCC
10
μA
Operating Supply Current
ICC
CS# = VIH, OE# = VIH, f = 5MHz, VCC = 3.6
100
mA
Standby Current
ISS
CS# = VIH, OE# = VIH, f = 5MHz, VCC = 3.6
50
mA
Output Low Voltage
VOL
IOL = 4.0mA
0.4
V
Output High Voltage
VOH
IOH = -4.0mA
2.4
V
RECOMMENDED OPERATING CONDITIONS
Parameter
Symbol
Min
Max
Unit
Supply Voltage
VCC
3.0
3.6
V
Input High Voltage
VIH
2.2
VCC + 0.3
V
Input Low Voltage
VIL
-0.3
+0.8
V
Operating Temp. (Mil)
TA
-55
+125
°C
CAPACITANCE
TA = +25°C
Parameter
Symbol
Conditions
Max
Unit
Input capacitance
CIN
VIN = 0 V, f = 1.0 MHz
12
pF
Output capacitance
COUT
VOUT = 0 V, f = 1.0 MHz
12
pF
This parameter is guaranteed by design but not tested.
ABSOLUTE MAXIMUM RATINGS
Parameter
Symbol
Min
Max
Unit
Operating Temperature
TA
-55
+125
°C
Storage Temperature
TSTG
-65
+150
°C
Signal Voltage Range to GND
VG
-0.5
4.6
V
Junction Temperature
TJ
150
°C
Supply Voltage
VCC
-0.5
4.6
V
TRUTH TABLE
CS#
OE#
WE#
MODE
DATA I/O
POWER
H
X
Standby
High Z
Standby
L
H
Read
Data Out
Active
L
X
L
Write
Data In
Active
L
H
Out Disable
High Z
Acvive
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| WS512K32-15G1UIA | 512K X 32 MULTI DEVICE SRAM MODULE, 15 ns, CQFP68 |
| W7NCF256H20ISADG | 16M X 16 FLASH 3.3V PROM CARD, 150 ns, UUC |
| W7NCF512H31CSAEG | 32M X 16 FLASH 3.3V PROM CARD, 150 ns, UUC |
| WS128K32N-55G4TIA | 128K X 32 MULTI DEVICE SRAM MODULE, 55 ns, CQFP68 |
| W3EG72125S202D3M | 128M X 72 DDR DRAM MODULE, 0.8 ns, DMA184 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| WMS512K8V-20CM | 制造商:Microsemi Corporation 功能描述:512K X 8 SRAM MONOLITHIC, 3.3V, 20NS, 32DIP, MIL-SCREENED - Bulk |
| WMS512K8V-20DEC | 制造商:Microsemi Corporation 功能描述:512K X 8 SRAM MONOLITHIC, 3.3V, 20NS, 32 CSOJ EVOL., COMMERC - Bulk |
| WMS512K8V-20DEI | 制造商:Microsemi Corporation 功能描述:512K X 8 SRAM MONOLITHIC, 3.3V, 20NS, 32 CSOJ EVOL., INDUSTR - Bulk |
| WMS512K8V-20DEM | 制造商:Microsemi Corporation 功能描述:512K X 8 SRAM MONOLITHIC, 3.3V, 20NS, 32 CSOJ EVOL., MIL-SCR - Bulk |
| WMS512K8V-20DJC | 制造商:Microsemi Corporation 功能描述:512K X 8 SRAM MONOLITHIC, 3.3V, 20NS, 36 CSOJ REV., COMMERCI - Bulk |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。