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參數(shù)資料
| 型號(hào)： | WMS512K8V-17FMA |
| 廠商： | MICROSEMI CORP-PMG MICROELECTRONICS |
| 元件分類(lèi)： | SRAM |
| 英文描述： | 512K X 8 STANDARD SRAM, 17 ns, CDFP36 |
| 封裝： | CERAMIC, DFP-36 |
| 文件頁(yè)數(shù)： | 2/9頁(yè) |
| 文件大?。?/td> | 323K |
| 代理商： | WMS512K8V-17FMA |
2
White Electronic Designs Corporation (602) 437-1520 www.whiteedc.com
White Electronic Designs
WMS512K8V-XXX
October 2004
Rev. 8
DC CHARACTERISTICS - CMOS COMPATIBLE
VCC = 5.0V, GND = 0V, -55°C ≤TA ≤ 125°C
Parameter
Symbol
Conditions
Min
Max
Unit
Input Leakage Current
ILI
VCC = 3.6, VIN = GND to VCC
10
μA
Output Leakage Current
ILO
CS# = VIH, OE# = VIH, VOUT = GND to VCC
10
μA
Operating Supply Current
ICC
CS# = VIH, OE# = VIH, f = 5MHz, VCC = 3.6
100
mA
Standby Current
ISS
CS# = VIH, OE# = VIH, f = 5MHz, VCC = 3.6
50
mA
Output Low Voltage
VOL
IOL = 4.0mA
0.4
V
Output High Voltage
VOH
IOH = -4.0mA
2.4
V
RECOMMENDED OPERATING CONDITIONS
Parameter
Symbol
Min
Max
Unit
Supply Voltage
VCC
3.0
3.6
V
Input High Voltage
VIH
2.2
VCC + 0.3
V
Input Low Voltage
VIL
-0.3
+0.8
V
Operating Temp. (Mil)
TA
-55
+125
°C
CAPACITANCE
TA = +25°C
Parameter
Symbol
Conditions
Max
Unit
Input capacitance
CIN
VIN = 0 V, f = 1.0 MHz
12
pF
Output capacitance
COUT
VOUT = 0 V, f = 1.0 MHz
12
pF
This parameter is guaranteed by design but not tested.
ABSOLUTE MAXIMUM RATINGS
Parameter
Symbol
Min
Max
Unit
Operating Temperature
TA
-55
+125
°C
Storage Temperature
TSTG
-65
+150
°C
Signal Voltage Range to GND
VG
-0.5
4.6
V
Junction Temperature
TJ
150
°C
Supply Voltage
VCC
-0.5
4.6
V
TRUTH TABLE
CS#
OE#
WE#
MODE
DATA I/O
POWER
H
X
Standby
High Z
Standby
L
H
Read
Data Out
Active
L
X
L
Write
Data In
Active
L
H
Out Disable
High Z
Acvive
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