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參數(shù)資料
| 型號(hào)： | WMS256K16L-20DLMA |
| 元件分類： | SRAM |
| 英文描述： | 256K X 16 STANDARD SRAM, 20 ns, CDSO44 |
| 封裝： | CERAMIC, SOJ-44 |
| 文件頁(yè)數(shù)： | 2/7頁(yè) |
| 文件大小： | 109K |
| 代理商： | WMS256K16L-20DLMA |
2
White Electronic Designs Corporation (602) 437-1520 www.whiteedc.com
WMS256K16-XXX
TRUTH TABLE
CS
WE
OE
LB
UB
Mode
Data I/O
Power
I/O1-8
I/O9-16
H
X
Not Select
High Z
Standby
LH
H
X
Output Disable
High Z
Active
LX
X
H
L
H
Data Out
High Z
L
H
L
H
L
Read
High Z
Data Out
Active
L
Data Out
L
H
Data In
High Z
L
X
H
L
Write
High Z
Data In
Active
L
Data In
ABSOLUTE MAXIMUM RATINGS
Parameter
Symbol
Min
Max
Unit
Operating Temperature
TA
-55
+125
°C
Storage Temperature
TSTG
-65
+150
°C
Signal Voltage Relative to GND
VG
-0.5
Vcc+0.5
V
Junction Temperature
TJ
150
°C
Supply Voltage
VCC
-0.5
7.0
V
RECOMMENDED OPERATING CONDITIONS
Parameter
Symbol
Min
Max
Unit
Supply Voltage
VCC
4.5
5.5
V
Input High Voltage
VIH
2.2
VCC + 0.3
V
Input Low Voltage
VIL
-0.3
+0.8
V
Operating Temp. (Mil.)
TA
-55
+125
°C
Parameter
Symbol
Condition
Max
Unit
Input capacitance
CIN
VIN = 0V, f = 1.0MHz
20
pF
Output capicitance
COUT
VOUT = 0V, f = 1.0MHz
20
pF
This parameter is guaranteed by design but not tested.
CAPACITANCE
(TA = +25
°C)
DC CHARACTERISTICS
(VCC = 5.0V, GND = 0V, TA = -55
°C to +125°C)
Parameter
Sym
Conditions
Units
Min
Max
Input Leakage Current
ILI
VCC = 5.5, VIN = GND to VCC
10
A
Output Leakage Current
ILO
CS = VIH, OE = VIH, VOUT = GND to VCC
10
A
Operating Supply Current
ICC
CS = VIL, OE = VIH, f = 5MHz, Vcc = 5.5
275
mA
Standby Current
ISB
CS = VIH, OE = VIH, f = 5MHz, Vcc = 5.5
17
mA
Output Low Voltage
VOL
IOL = 8mA, VCC = 4.5
0.4
V
Output High Voltage
VOH
IOH = -4.0mA, VCC = 4.5
2.4
V
NOTE: DC test conditions: VIH = VCC -0.3V, VIL = 0.3V
Parameter
Symbol
Conditions
Units
Min
Typ
Max
Data Retention Supply Voltage
VDR
CS
≥ VCC -0.2V
2.0
5.5
V
Data Retention Current
ICCDR1
VCC = 3V
1.0
8.0
mA
LOW POWER DATA RETENTION CHARACTERISTICS (WMS256K16L-XXX ONLY)
(TA = -55
°C to +125°C)
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