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參數(shù)資料
| 型號： | WMS128K8L-100DEME |
| 元件分類： | SRAM |
| 英文描述： | 128K X 8 STANDARD SRAM, 100 ns, CDSO32 |
| 封裝： | CERAMIC, SOJ-32 |
| 文件頁數(shù)： | 3/8頁 |
| 文件大?。?/td> | 107K |
| 代理商： | WMS128K8L-100DEME |
White Electronic Designs Corporation (602) 437-1520 www.whiteedc.com
2
SRAM
MONOLITHICS
3
WMS128K8-XXX
Parameter
Symbol
-70
-85
-100
-120
Units
Read Cycle
Min
Max
Min
Max
Min
Max
Min
Max
ReadCycleTime
tRC
70
85
100
120
ns
AddressAccessTime
tAA
70
85
100
120
ns
OutputHoldfromAddressChange
tOH
3
333
ns
Chip Select Access Time
tACS
70
85
100
120
ns
OutputEnabletoOutputValid
tOE
35
45
50
60
ns
Chip Select to Output in Low Z
t CLZ1
5
555
ns
OutputEnabletoOutputinLowZ
t OLZ 1
5
555
ns
ChipDisabletoOutputinHighZ
tCHZ 1
25
35
ns
OutputDisabletoOutputinHighZ
tOHZ 1
25
35
ns
1. This parameter is guaranteed by design but not tested.
I
Current Source
D.U.T.
C
= 50 pf
eff
I
OL
V
≈ 1.5V
(Bipolar Supply)
Z
Current Source
OH
NOTES:
VZ is programmable from -2V to +7V.
IOL & IOH programmable from 0 to 16mA.
Tester Impedance Z0 = 75
.
VZ is typically the midpoint of VOH and VOL.
IOL & IOH are adjusted to simulate a typical resistive load circuit.
ATE tester includes jig capacitance.
AC TEST CIRCUIT
AC TEST CONDITIONS
Parameter
Typ
Unit
Input Pulse Levels
VIL= 0, V IH = 3.0
V
Input Rise and Fall
5
ns
InputandOutputReferenceLevel
1 . 5
V
Output Timing Reference Level
1 . 5
V
AC CHARACTERISTICS
(VCC = 5.0V, TA = -55
°C To +125°C)
AC CHARACTERISTICS
(VCC = 5.0V, TA = -55
°C To +125°C)
Parameter
Symbol
-70
-85
-100
-120
Units
Write Cycle
Min
Max
Min
Max
Min
Max
Min
Max
WriteCycleTime
tWC
70
85
100
120
ns
Chip Select to End of Write
tCW
60
75
80
100
ns
Address Valid to End of Write
tAW
60
75
80
100
ns
DataValidtoEndofWrite
tDW
30
35
40
50
ns
WritePulseWidth
tWP
50
55
70
80
ns
AddressSetupTime
tAS
0
000
ns
AddressHoldTime
tAH
5
555
ns
OutputActivefromEndofWrite
tOW 1
5
555
ns
Write Enable to Output in High Z
tWHZ 1
25
30
35
ns
DataHoldTime
tDH
0
000
ns
1. This parameter is guaranteed by design but not tested.
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