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參數(shù)資料
| 型號： | WME128K8-300CC |
| 廠商： | MICROSEMI CORP-PMG MICROELECTRONICS |
| 元件分類： | PROM |
| 英文描述： | 128K X 8 EEPROM 5V, 300 ns, CDIP32 |
| 封裝： | 0.600 INCH, HERMETIC SEALED, SINGLE CAVITY, SIDE BRAZED, CERAMIC, DIP-32 |
| 文件頁數(shù)： | 6/11頁 |
| 文件大?。?/td> | 320K |
| 代理商： | WME128K8-300CC |
4
White Electronic Designs Corporation (602) 437-1520 www.whiteedc.com
White Electronic Designs
WME128K8-XXX
January 2008
Rev. 6
White Electronic Designs Corp. reserves the right to change products or specications without notice.
WRITE CYCLE TIMING
Figures 4 and 5 show the write cycle timing relationships.
A write cycle begins with address application, write enable
and chip select. Chip select is accomplished by placing
the CS# line low. Write enable consists of setting the WE#
line low. The write cycle begins when the last of either CS#
or WE# goes low.
The WE# line transition from high to low also initiates
an internal 150μsec delay timer to permit page mode
operation. Each subsequent WE# transition from high to
low that occurs before the completion of the 150μsec time
out will restart the timer from zero. The operation of the
timer is the same as a retriggerable one-shot.
WRITE
Write operations are initiated when both CS# and WE#
are low and OE# is high. The EEPROM devices support
both a CS# and WE# controlled write cycle. The address is
latched by the falling edge of either CS# or WE#, whichever
occurs last.
The data is latched internally by the rising edge of either
CS# or WE#, whichever occurs rst. A byte write operation
will automatically continue to completion.
AC WRITE CHARACTERISTICS
VCC = 5.0V, VSS = 0V, -55°C ≤ TA ≤ +125°C
Parameter
Symbol
128Kx8
Unit
Min
Max
Write Cycle Time, TYP = 6ms
tWC
10
ms
Address Set-up Time
tAS
10
ns
Write Pulse Width (WE# or CS#)
tWP
100
ns
Chip Select Set-up Time
tCS
0ns
Address Hold Time
tAH
100
ns
Data Hold Time
tDH
10
ns
Chip Select Hold Time
tCH
0ns
Data Set-up Time
tDS
50
ns
Output Enable Set-up Time
tOES
0ns
Output Enable Hold Time
tOEH
0ns
Write Pulse Width High
tWPH
50
ns
相關PDF資料 |
PDF描述 |
|---|---|
| WMF128K8-50CI5A | 128K X 8 FLASH 5V PROM, 50 ns, CDIP32 |
| WMS256K16-17FGM | 256K X 16 STANDARD SRAM, 17 ns, CDSO44 |
| WS128K32-55G2LQ | 128K X 32 MULTI DEVICE SRAM MODULE, 55 ns, CQFP68 |
| WS128K32-55G2TCA | 128K X 32 MULTI DEVICE SRAM MODULE, 55 ns, CQMA68 |
| WS128K32-55G2TI | 128K X 32 MULTI DEVICE SRAM MODULE, 55 ns, CQMA68 |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| WME128K8-300CCA | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 EEPROM |
| WME128K8-300CI | 制造商:Microsemi Corporation 功能描述:128K X 8 EEPROM MONOLITHIC, 300NS, 32 DIP, INDUSTRIAL SCREEN - Bulk |
| WME128K8-300CIA | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 EEPROM |
| WME128K8-300CM | 制造商:Microsemi Corporation 功能描述:128K X 8 EEPROM MONOLITHIC, 300NS, 32 DIP, MIL-SCREENED - Bulk |
| WME128K8-300CMA | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 EEPROM |
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