參數(shù)資料
型號(hào): WMBT5401LT1
廠商: 永盛國(guó)際集團(tuán)
英文描述: PNP Silicon Transistor
中文描述: 進(jìn)步黨硅晶體管
文件頁(yè)數(shù): 1/2頁(yè)
文件大?。?/td> 34K
代理商: WMBT5401LT1
1
Motorola Small–Signal Transistors, FETs and Diodes Device Data
PNP Silicon
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector–Emitter Voltage
VCEO
VCBO
VEBO
IC
–150
Vdc
Collector–Base Voltage
–160
Vdc
Emitter–Base Voltage
–5.0
Vdc
Collector Current — Continuous
–500
mAdc
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation
TA = 25
°
C
Derate above 25
°
C
PD
225
1.8
mW
mW/
°
C
Thermal Resistance, Junction to Ambient
RJA
PD
556
°
C/W
Total Device Dissipation
Alumina Substrate,(2) TA = 25
°
C
Derate above 25
°
C
mW
mW/
°
C
Thermal Resistance, Junction to Ambient
RJA
TJ, Tstg
°
C/W
Junction and Storage Temperature
–55 to +150
°
C
DEVICE MARKING
MBT5401LT1 = 2L
ELECTRICAL CHARACTERISTICS
(TA = 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(IC = –1.0 mAdc, IB = 0)
V(BR)CEO
–150
Vdc
Collector–Base Breakdown Voltage
(IC = –100 Adc, IE = 0)
V(BR)CBO
–160
Vdc
Emitter–Base Breakdown Voltage
(IE = –10 Adc, IC = 0)
V(BR)EBO
–5.0
Vdc
Collector Cutoff Current
(VCB = –120 Vdc, IE = 0)
(VCB = –120 Vdc, IE = 0, TA = 100
°
C)
I
–50
–50
nAdc
μ
Adc
1
2
3
SOT–23 (TO–236AB)
COLLECTOR
3
1
BASE
2
EMITTER
Wing Shing Computer Components Co., (H.K.)Ltd.
Homepage:
http://www.wingshing.com
Tel:(852) 2341 9276 Fax:(852) 27978153
E-mail: wsccltd hkstar.com
WMBT5401LT1
W
CB0
Transistor
相關(guān)PDF資料
PDF描述
WMBT5551LT1 NPN Silicon Transistor
WMBTA42 NPN EPITAXIAL SILICON TRANSISTORS
WMBTA92 TVS UNI-DIR 17V 400W SMA
WMF512K8-60FEI5A 512Kx8 MONOLITHIC FLASH, SMD 5962-96692
WMF512K8-60FEM5 512Kx8 MONOLITHIC FLASH, SMD 5962-96692
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
WMBT5551LT1 制造商:WINGS 制造商全稱:Wing Shing Computer Components 功能描述:NPN Silicon Transistor
WMBTA42 制造商:WINGS 制造商全稱:Wing Shing Computer Components 功能描述:NPN EPITAXIAL SILICON TRANSISTORS
WMBTA92 制造商:WINGS 制造商全稱:Wing Shing Computer Components 功能描述:NPN EPITAXIAL SILICON TRANSISTORS
WMBV1 功能描述:電線導(dǎo)管 1" (25mm) Wide Verticle Wire Mgmt. Brack RoHS:否 制造商:Panduit 類型:Slotted SideWall Open finger design wiring cut 材料:Polypropylene 顏色:Light Gray 大小: 最大光束直徑: 抗拉強(qiáng)度: 外部導(dǎo)管寬度:25 mm 外部導(dǎo)管高度:25 mm
WMBV2 功能描述:電線導(dǎo)管 2" (51mm) Wide Verticle Wire Mgmt. Brack RoHS:否 制造商:Panduit 類型:Slotted SideWall Open finger design wiring cut 材料:Polypropylene 顏色:Light Gray 大小: 最大光束直徑: 抗拉強(qiáng)度: 外部導(dǎo)管寬度:25 mm 外部導(dǎo)管高度:25 mm