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參數(shù)資料
| 型號： | WF8M32-XG4DX5 |
| 英文描述： | 8Mx32 5V Flash Module(8Mx32 5V閃速存儲器模塊) |
| 中文描述： | 8Mx32 5V的閃存模塊（8Mx32 5V的閃速存儲器模塊） |
| 文件頁數(shù)： | 4/10頁 |
| 文件大?。?/td> | 122K |
| 代理商： | WF8M32-XG4DX5 |
4
White Electronic Designs Corporation Phoenix, AZ (602) 437-1520
WF8M32-XG4DX5
CS
WE
RESET
t
RP
The rising edge of the last WE signal
Entire programming
or erase operations
t
Ready
t
BUSY
AC CHARACTERISTICS – WRITE/ERASE/PROGRAM OPERATIONS,CS CONTROLLED
(V
CC
= 5.0V, V
SS
= 0V, T
A
= -55
°
C to +125
°
C)
FIG. 2
AC TEST CIRCUIT
AC TEST CONDITIONS
NOTES:
V
Z
is programmable from-2V to +7V.
I
OL
& I
OH
programmable from0 to 16mA.
Tester Impedance Z
0
= 75
.
V
Z
is typically the mdpoint of V
OH
and V
OL
.
I
OL
& I
OH
Parameter
Input Pulse Levels
Input Rise and Fall
Input and Output Reference Level
Output Timing Reference Level
Typ
Unit
V
ns
V
V
V
IL
= 0, V
IH
= 3.0
5
1.5
1.5
I
Current Source
D.U.T.
C = 50 pf
I
OL
V
≈
1.5V
(Bipolar Supply)
Z
Current Source
OH
Parameter
Symbol
-100
-120
-150
Unit
Min
100
0
50
0
50
0
50
20
Max
Min
120
0
50
0
50
0
50
20
Max
Min
150
0
50
0
50
0
50
20
Max
Write Cycle Time
Write Enable Setup Time
Chip Select Pulse Width
Address Setup Time
Data Setup Time
Data Hold Time
Address Hold Time
Chip Select Pulse Width High
Duration of Byte Programming Operation (1)
Sector Erase Time (2)
Read Recovery Time
Chip Programming Time
Chip Erase Time (3)
Output Enable Hold Time (4)
t
AVAV
t
WLEL
t
ELEH
t
AVEL
t
DVEH
t
EHDX
t
ELAX
t
EHEL
t
WHWH1
t
WHWH2
t
GHEL
t
WC
t
WS
t
CP
t
AS
t
DS
t
DH
t
AH
t
CPH
ns
ns
ns
ns
ns
ns
ns
ns
μ
s
sec
μ
s
sec
sec
ns
300
15
300
15
300
15
0
0
0
100
480
100
480
100
480
t
OEH
10
10
10
NOTES:
1. Typical value for t
WHWH1
is 7
μ
s.
2. Typical value for t
WHWH2
is 1sec.
3. Typical value for Chip Erase Time is 32sec.
4. For Toggle and Data Polling.
FIG. 3
RESET TIMING DIAGRAM
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