參數(shù)資料
型號: WF512K32N-70G2LM5A
英文描述: 512Kx32 5V FLASH MODULE, SMD 5962-94612
中文描述: 512Kx32 5V的閃存盤,貼片5962-94612
文件頁數(shù): 3/16頁
文件大?。?/td> 514K
代理商: WF512K32N-70G2LM5A
3
White Electronic Designs Corporation (602) 437-1520 www.wedc.com
White Electronic Designs
WF512K32-XXX5
March 2006
Rev. 11
Absolute Maximum Ratings (1)
NOTES:
1. Stresses above the absolute maximum rating may cause permanent damage to the
device. Extended operation at the maximum levels may degrade performance and
affect reliability.
2. Minimum DC voltage on input or I/O pins is -0.5V. During voltage transitions,inputs
may overshoot Vss to -2.0 V for periods of up to 20ns. Maximum DC voltage on
output and I/O pins is Vcc + 0.5V. During voltage transitions, outputs may overshoot
to Vcc + 2.0 V for periods of up to 20ns.
3. Minimum DC input voltage on A9 pin is -0.5V. During voltage transitions, A9 may
overshoot Vss to -2V for periods of up to 20ns. Maximum DC input voltage on A9 is
+13.5V which may overshoot to 14.0 V for periods up to 20ns.
Parameter
Operating Temperature
Supply Voltage Range (V
CC
)
Signal voltage range (any pin except A9) (2)
Storage Temperature Range
Lead Temperature (soldering, 10 seconds)
Data Retention (Mil Temp)
Endurance - write/erase cycles (Mil Temp)
A9 Voltage for sector protect (V
ID
) (3)
Unit
°C
V
V
°C
°C
-55 to +125
-2.0 to +7.0
-2.0 to +7.0
-65 to +150
+300
20 years
1,000,000 cycles min.
-2.0 to +14.0
V
RECOMMENDED OPERATING CONDITIONS
Parameter
Symbol
Supply Voltage
V
CC
Input High Voltage
Input Low Voltage
Operating Temp. (Mil.)
Operating Temp. (Ind.)
A
9
Voltage for Sector Protect
V
ID
Min
4.5
2.0
-0.5
-55
-40
11.5
Max
5.5
V
CC
+ 0.5
+0.8
+125
+85
12.5
Unit
V
V
V
°C
°C
V
V
IH
V
IL
T
A
T
A
CAPACITANCE
T
A
= +25°C
Symbol
C
OE
C
WE
Parameter
OE# capacitance
WE
1-4
# capacitance
HIP (PGA)
CQFP G4T
CQFP G2U/G2L
CS
1-4
# capacitance
Data# I/O capacitance
Address input capacitance
This parameter is guaranteed by design but not tested.
Conditions
V
IN
= 0V, f = 1.0 MHz
V
IN
= 0V, f = 1.0 MHz
Max Unit
50
pF
pF
20
50
15
20
20
50
C
CS
C
I/O
C
AD
V
IN
= 0V, f = 1.0 MHz
V
I/O
= 0V, f = 1.0 MHz
V
IN
= 0V, f = 1.0 MHz
pF
pF
pF
DC CHARACTERISTICS
V
CC
= 5.0V, V
SS
= 0V, -55°C
T
A
+125°C
Conditions
V
CC
= 5.5, V
IN
= GND to V
CC
CS# = V
IH
, OE# = V
IH
, V
OUT
= GND to V
CC
CS# = V
IL
, OE# = V
IH
, f = 5MHz, V
CC
= 5.5
CS# = V
IH
, OE# = V
IH
Parameter
Input Leakage Current
Output Leakage Current
V
CC
Active Current for Read (1)
V
CC
Active Current for Program or Erase (2)
V
CC
Standby Current
V
CC
Static Current
Output Low Voltage
Output High Voltage
Sym
I
LI
I
LOx32
I
CC1
I
CC2
I
CC4
I
CC3
V
OL
V
OH1
V
LKO
Min
Max
10
10
190
240
6.5
0.6
0.45
Units
μA
μA
mA
mA
mA
mA
V
V
V
CC
= 5.5, CS = V
IH
, f = 5MHz
V
CC
= 5.5, CS = V
IH
I
OL
= 8.0mA, V
CC
= 4.5
I
OH
= 2.5mA, V
CC
= 4.5
0.85
X
V
CC
Low V
CC
Lock-Out Voltage
3.2
4.2
V
DC test conditions: VIL = 0.3V, VIH = VCC - 0.3V
NOTES:
1. The I
CC
current listed includes both the DC operating current and the frequency dependent component
(at 5 MHz). The frequency component typically is less than 2 mA/MHz, with OE at V
IH
.
2. I
CC
active while Embedded Algorithm (program or erase) is in progress.
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