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參數(shù)資料
| 型號： | WF4M32-XXX5 |
| 英文描述： | 4Mx32 5V FLASH MODULE |
| 中文描述： | 4Mx32 5V的閃存模塊 |
| 文件頁數(shù)： | 6/15頁 |
| 文件大?。?/td> | 456K |
| 代理商： | WF4M32-XXX5 |
6
White Electronic Designs Corporation (602) 437-1520 www.wedc.com
White Electronic Designs
WF4M32-XXX5
PRELIMINARY
June 2004
Rev. 6
NOTES:
1. A21 must be held constant until WE# or CS# go high, whichever occurs first.
2. Guaranteed by design, but not tested.
3. Typical value for t
WHWH1
is 7μs.
4. Typical value for t
WHWH2
is 1sec.
5. Typical value for Chip Erase Time is 32sec.
6. For Toggle and Data Polling.
AC CHARACTERISTICS FOR G4T AND H2 PACKAGES – WRITE/ERASE/PROGRAM OPERATIONS
- WE# CONTROLLED
V
CC
= 5.0V, T
A
= -55°C, -55°C
≤
T
A
≤
+125°C
Parameter
Symbol
Min
Write Cycle Time
t
AVAV
t
WC
100
Chip Select Setup Time
t
ELWL
t
CS
0
Write Enable Pulse Width
t
WLWH
t
WP
45
Address Setup Time
t
AVWL
t
AS
0
Data Setup Time
t
DVWH
t
DS
45
Data Hold Time
t
WHDX
t
DH
15
Address Hold Time (1)
t
WLAX
t
AH
45
Write Enable Pulse Width High (2)
t
WHWL
t
WPH
20
Duration of Byte Programming Operation (3)
t
WHWH1
Sector Erase (4)
t
WHWH2
Read Recovery Time before Write
t
GH
W
L
0
V
CC
Setup Time
t
VCS
50
Chip Programming Time
Chip Erase Time (5)
Output Enable Hold Time (6)
t
OEH
10
RESET# Pulse Width
t
RP
500
-100
-120
-150
Unit
Max
Min
120
0
50
0
50
15
50
20
Max
Min
150
0
50
0
50
15
50
20
Max
ns
ns
ns
ns
ns
ns
ns
ns
μs
sec
μs
μs
sec
sec
ns
ns
300
15
300
15
300
15
0
50
0
50
44
256
44
256
44
256
10
500
10
500
AC CHARACTERISTICS FOR G4T AND H2 PACKAGES – READ-ONLY OPERATIONS
V
CC
= 5.0V, T
A
= -55°C, -55°C
≤
T
A
≤
+125°C
Symbol
Min
Read Cycle Time
T
AVAV
T
RC
Address Access Time
T
AVQV
T
ACC
Chip Select Access Time
T
ELQV
T
CE
Output Enable to Output Valid
T
GLQV
T
OE
Chip Select High to Output High Z
T
EHQZ
T
DF
Output Enable High to Output High Z
T
GHQZ
T
DF
Output Hold from Addresses, CS# or OE# Change,
whichever is First
RESET# Low to Read Mode
T
READY
Parameter
-1000
-120
-150
Unit
Max
Min
120
Max
Min
150
Max
100
ns
ns
ns
ns
ns
ns
ns
100
100
50
40
40
120
120
50
45
45
150
150
55
45
45
T
AXQX
T
OH
0
0
0
20
20
20
μs
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