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參數(shù)資料
| 型號： | WF4M32-150H2I5 |
| 廠商： | MICROSEMI CORP-PMG MICROELECTRONICS |
| 元件分類： | PROM |
| 英文描述： | 4M X 32 FLASH 5V PROM MODULE, 150 ns, CPGA66 |
| 封裝： | 1.385 X 1.385 INCH, HERMETIC SEALED, CERAMIC, HIP-66 |
| 文件頁數(shù)： | 9/15頁 |
| 文件大?。?/td> | 631K |
| 代理商： | WF4M32-150H2I5 |
3
White Electronic Designs Corporation (602) 437-1520 www.whiteedc.com
White Electronic Designs
WF4M32-XXX5
June 2004
Rev. 6
PRELIMINARY
HIP = 66 pin, PGA Type, 1.385" square, Hermetic Ceramic HIP (Package 402).
G2T = 68 lead, Hermetic CQFP (G2T), 22.4mm (0.880") square. Designed to t JEDEC 68
lead 0.990" CQFJ footprint (Fig. 3) (Package 509)
G4T = 68 lead, 40mm Low Prole CQFP, 3.5mm (0.140") (Package 502 )
ABSOLUTE MAXIMUM RATINGS
Parameter
Symbol
Ratings
Unit
Voltage on Any Pin Relative to VSS
VT
-2.0 to +7.0
V
Power Dissipation
PT
8W
Storage Temperature
TSTG
-65 to +125
°C
Short Circuit Output Current
IOS
100
mA
Endurance — write/erase cycles
(Mil Temp)
100,000 min.
cycles
Data Retention (Mil Temp)
20
years
RECOMMENDED DC OPERATING CONDITIONS
Parameter
Symbol
Min
Typ
Max
Unit
Supply Voltage
VCC
4.5
5.0
5.5
V
Ground
VSS
000
V
Input High Voltage
VIH
2.0
–
VCC + 0.5
V
Input Low Voltage
VIL
-0.5
–
+0.8
V
Operating Temperature (Mil.)
TA
-55
–
+125
°C
Operating Temperature (Ind.)
TA
-40
–
+85
°C
DC CHARACTERISTICS - CMOS COMPATIBLE
VCC = 5.0V, VSS = 0V, -55°C ≤ TA ≤ +125°C
HIP
G2T
G4T
Parameter
Symbol Conditions
Min
Max
Min
Max
Min
Max
Unit
Input Leakage Current
ILI
VCC = 5.5, VIN = GND to VCC
10
μA
Output Leakage Current
ILOX32
VCC = 5.5, VIN = GND to VCC
10
μA
VCC Active Current for Read (1)
ICC1
CS# = VIL, OE# = VIH, f = 5MHz
320
215
345
mA
VCC Active Current for Program
or Erase (2)
ICC2
CS# = VIL, OE# = VIH
420
295
445
mA
VCC Standby Current
ICC3
VCC = 5.5, CS# = VIH,
f = 5MHz, RESET# = VIH
20
2.0
95
mA
Output Low Voltage
VOL
IOL = 12.0 mA, VCC = 4.5
0.45
V
Output High Voltage
VOH
IOH = -2.5 mA, VCC = 4.5
0.85 x
VCC
0.85 x
VCC
0.85 x
VCC
V
Low VCC Lock-Out Voltage
VLKO
3.2
4.2
3.2
4.2
3.2
4.2
V
CAPACITANCE
A = +25°C, VIN = OV, F = 1.0MHz
Parameter
Symbol HIP (H2) CQFP (G2T) CQFP(G4T)
OE# capacitance
COE
75
20
WE# capacitance
CWE
75
20
CS# capacitance
CCS
20
50
20
Data I/O capacitance
CI/O
30
Address input capacitance
CAD
75
20
This parameter is guaranteed by design but not tested.
NOTES:
1. The Icc current listed includes both the DC operating current and the frequency
dependent component (@ 5MHz). The frequency component typically is less than
2mA/MHz, with OE# at VIH.
2. ICC active while Embedded Algorithm (program or erase) is in progress.
3. DC test conditions VIL = 0.3V, VIH = VCC - 0.3V
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| WF4M32-150H2I5A | 制造商:WEDC 制造商全稱:White Electronic Designs Corporation 功能描述:4Mx32 5V FLASH MODULE |
| WF4M32-150H2M5 | 制造商:Microsemi Corporation 功能描述:4M X 32 FLASH MODULE, 5V, 150NS, 66 PGA 1.385" SQ., MIL-SCRE - Bulk |
| WF4M32-150H2M5A | 制造商:WEDC 制造商全稱:White Electronic Designs Corporation 功能描述:4Mx32 5V FLASH MODULE |
| WF4M32-XG2TX5 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Flash MCP |
| WF4M32-XG4TX5 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Flash MCP |
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