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參數(shù)資料
| 型號： | WF4M16-XDTX5 |
| 英文描述： | Flash MCP |
| 中文描述： | 閃存MCP的 |
| 文件頁數(shù)： | 2/11頁 |
| 文件大?。?/td> | 122K |
| 代理商： | WF4M16-XDTX5 |
2
White Electronic Designs Corporation (602) 437-1520 www.whiteedc.com
WF4M16-XDTX5
ABSOLUTE MAXIMUM RATINGS
Parameter
Symbol
Ratings
Unit
Voltage on Any Pin Relative to V
SS
V
T
-2.0 to +7.0
V
Power Dissipation
P
T
8
W
°
C
mA
cycles
Storage Temperature
Tstg
-65 to +125
Short Circuit Output Current
Endurance - Write/Erase Cycles
(Mil Temp)
Data Retention (Mil Temp)
I
OS
100
100,000 min
20
years
RECOMMENDED DC OPERATING CONDITIONS
Parameter
Symbol
Min
Max
Unit
Supply Voltage
Ground
Input High Voltage
Input Low Voltage
Operating Temperature (Mil.)
Operating Temperature (Ind.)
V
CC
V
SS
V
IH
V
IL
T
A
T
A
4.5
0
2.0
-0.5
-55
-40
5.5
0
V
V
V
V
°
C
°
C
V
CC
+ 0.5
+0.8
+125
+85
DC CHARACTERISTICS - CMOS COMPATIBLE
(V
CC
= 5.0V, V
SS
= 0V, T
A
= -55
°
C to +125
°
C)
NOTES:
1. The Icc current listed includes both the DC operating current and the frequency dependent component (@ 5MHz). The frequency component typically is less than
2mA/MHz, with OE at V
IH
.
2. Icc active while Embedded Algorithm(programor erase) is in progress.
3. DC test conditions V
IL
= 0.3V, V
IH
= V
CC
- 0.3V
Parameter
Symbol
Conditions
Min
Max
Unit
Input Leakage Current
I
LI
V
CC
= 5.5, V
IN
= GND to V
CC
10
μ
A
Output Leakage Current
I
LOx32
V
CC
= 5.5, V
IN
= GND to V
CC
10
μ
A
V
CC
Active Current for Read (1)
I
CC1
CS = V
IL
, OE = V
IH
, f = 5MHz, V
CC
= 5.5
82
mA
V
CC
Active Current for Program or Erase (2)
I
CC2
CS = V
IL
, OE = V
IH
, V
CC
= 5.5
122
mA
V
CC
Standby Current
I
CC3
V
CC
= 5.5, CS = V
IH
, f = 5MHz
8.0
mA
Output Low Voltage
V
OL
I
OL
= 12.0 mA, V
CC
= 4.5
0.45
V
Output High Voltage
V
OH
I
OH
= -2.5 mA, V
CC
= 4.5
0.85xVcc
V
Low V
CC
Lock-Out Voltage
V
LKO
3.2
4.2
V
CAPACITANCE
(T
A
= +25
°
C)
Parameter
OE capacitance
Symbol
C
OE
Conditions
V
IN
= 0 V, f = 1.0 MHz
Max
45
Unit
pF
WE capacitance
CS capacitance
C
WE
C
CS
V
IN
= 0 V, f = 1.0 MHz
V
IN
= 0 V, f = 1.0 MHz
45
15
pF
pF
Data I/O capacitance
C
I/O
V
I/O
= 0 V, f = 1.0 MHz
25
pF
Address input capacitance
C
AD
V
IN
= 0 V, f = 1.0 MHz
45
pF
This parameter is guaranteed by design but not tested.
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