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參數(shù)資料
| 型號： | WF2M16-150FLM5 |
| 廠商： | WHITE ELECTRONIC DESIGNS CORP |
| 元件分類： | PROM |
| 英文描述： | 2M X 16 FLASH 5V PROM MODULE, 150 ns, CDFP44 |
| 封裝： | CERAMIC, FP-44 |
| 文件頁數(shù)： | 7/12頁 |
| 文件大小： | 217K |
| 代理商： | WF2M16-150FLM5 |
4
White Electronic Designs Corporation (602) 437-1520 www.whiteedc.com
WF2M16-XXX5
CS
WE
RY/BY
RESET
tRP
The rising edge of the last WE signal
Entire programming
or erase operations
tReady
tBUSY
AC CHARACTERISTICS – WRITE/ERASE/PROGRAM OPERATIONS,CS CONTROLLED
(VCC = 5.0V, VSS = 0V, TA = -55
°C to +125°C)
FIG. 2
AC TEST CIRCUIT
AC TEST CONDITIONS
NOTES:
VZ is programmable from -2V to +7V.
IOL & IOH programmable from 0 to 16mA.
Tester Impedance Z0 = 75
.
VZ is typically the midpoint of VOH and VOL.
IOL & IOH are adjusted to simulate a typical resistive load circuit.
ATE tester includes jig capacitance.
Parameter
Typ
Unit
Input Pulse Levels
VIL = 0, VIH = 3.0
V
Input Rise and Fall
5
ns
Input and Output Reference Level
1.5
V
Output Timing Reference Level
1.5
V
I
Current Source
D.U.T.
C
= 50 pf
eff
I
OL
V
≈ 1.5V
(Bipolar Supply)
Z
Current Source
OH
Parameter
Symbol
-90
-120
-150
Unit
Min
Max
Min
Max
Min
Max
Write Cycle Time
tAVAV
tWC
90
120
150
ns
Write Enable Setup Time
tWLEL
tWS
00
0
ns
Chip Select Pulse Width
tELEH
tCP
45
50
ns
Address Setup Time
tAVEL
tAS
00
0
ns
Data Setup Time
tDVEH
tDS
45
50
ns
Data Hold Time
tEHDX
tDH
00
0
ns
Address Hold Time
tELAX
tAH
45
50
ns
Chip Select Pulse Width High
tEHEL
tCPH
20
ns
Duration of Byte Programming Operation (1)
tWHWH1
300
s
Sector Erase Time (2)
tWHWH2
15
sec
Read Recovery Time
tGHEL
00
0
s
Chip Programming Time
44
sec
Chip Erase Time (3)
256
sec
Output Enable Hold Time (4)
tOEH
10
ns
NOTES:
1. Typical value for tWHWH1 is 7
s.
2. Typical value for tWHWH2 is 1sec.
3. Typical value for Chip Erase Time is 32sec.
4. For Toggle and Data Polling.
FIG. 3
RESET TIMING DIAGRAM
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