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參數(shù)資料
| 型號： | WF128K32-90H1M5 |
| 元件分類： | PROM |
| 英文描述： | 128K X 32 FLASH 5V PROM MODULE, 90 ns, CHIP66 |
| 封裝： | PGA TYPE, CERAMIC, HIP-66 |
| 文件頁數(shù)： | 10/15頁 |
| 文件大小： | 241K |
| 代理商： | WF128K32-90H1M5 |
4
White Microelectronics Phoenix, AZ (602) 437-1520
7
FLASH
MODULES
WF128K32-XXX5
FIG. 4
AC TEST CIRCUIT
NOTES:
VZ is programmable from -2V to +7V.
IOL & IOH programmable from 0 to 16mA.
Tester Impedance Z0 = 75
.
VZ is typically the midpoint of VOH and VOL.
IOL & IOH are adjusted to simulate a typical resistive load circuit.
ATE tester includes jig capacitance.
AC TEST CONDITIONS
I
Current Source
D.U.T.
C
= 50 pf
eff
I
OL
V
≈ 1.5V
(Bipolar Supply)
Z
Current Source
OH
Parameter
Typ
Unit
Input Pulse Levels
VIL = 0, VIH = 3.0
V
Input Rise and Fall
5
ns
Input and Output Reference Level
1.5
V
Output Timing Reference Level
1.5
V
AC CHARACTERISTICS – WRITE/ERASE/PROGRAM OPERATIONS, CS CONTROLLED
(VCC = 5.0V, VSS = 0V, TA = -55
°C to +125°C)
Parameter
Symbol
-50
-60
-70
-90
-120
-150
Unit
Min
Max
Min
Max
Min Max
Min
Max
Min
Max
Min
Max
Write Cycle Time
tAVAV
tWC
50
60
70
90
120
150
ns
WE Setup Time
tWLEL
tWS
00
0
ns
CS Pulse Width
tELEH
tCP
25
30
35
45
50
ns
Address Setup Time
tAVEL
tAS
00
0
ns
Data Setup Time
tDVEH
tDS
25
30
45
50
ns
Data Hold Time
tEHDX
tDH
00
0
ns
Address Hold Time
tELAX
tAH
40
45
50
ns
WE Hold from WE High
tEHWH
tWH
00
0
ns
CS Pulse Width High
tEHEL
tCPH
20
ns
Duration of Programming Operation
tWHWH1
14
s
Duration of Erase Operation
tWHWH2
2.2
60
2.2
60
2.2
60
2.2
60
2.2
60
2.2
60
sec
Read Recovery before Write
tGHEL
00
0
ns
Chip Programming Time
12.5
sec
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| WF128K32-90H1M5A | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:EEPROM |
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