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| 型號(hào)： | WEDPN4M64V-125BM |
| 廠(chǎng)商： | WHITE ELECTRONIC DESIGNS CORP |
| 元件分類(lèi)： | DRAM |
| 英文描述： | 4M X 64 SYNCHRONOUS DRAM, 6 ns, PBGA219 |
| 封裝： | 21 X 21 MM, PLASTIC, BGA-219 |
| 文件頁(yè)數(shù)： | 12/12頁(yè) |
| 文件大?。?/td> | 385K |
| 代理商： | WEDPN4M64V-125BM |
9
White Electronic Designs Corporation (602) 437-1520 www.whiteedc.com
White Electronic Designs
WEDPN4M64V-XBX
January 2005
Rev. 8
White Electronic Designs Corp. reserves the right to change products or specications without notice.
DC ELECTRICAL CHARACTERISTICS AND OPERATING CONDITIONS (NOTES 1, 6)
VCC = +3.3V ±0.3V; -55°C ≤ TA ≤ +125°C
Parameter/Condition
Symbol
Min
Max
Units
Supply Voltage
VCC
3
3.6
V
Input High Voltage: Logic 1; All inputs (21)
VIH
2VCC + 0.3
V
Input Low Voltage: Logic 0; All inputs (21)
VIL
-0.3
0.8
V
Input Leakage Current: Any input 0V VIN VCC (All other pins not under test = 0V)
II
-5
5
μA
Input Leakage Address Current: Any input 0V VIN VCC (All other pins not under test = 0V)
II
-20
20
μA
Output Leakage Current: I/Os are disabled; 0V VOUT VCC
IOZ
-5
5
μA
Output Levels:
Output High Voltage (IOUT = -4mA)
Output Low Voltage (IOUT = 4mA)
VOH
2.4
–
V
VOL
–
0.4
V
ABSOLUTE MAXIMUM RATINGS
Parameter
Unit
Voltage on VCC Supply relative to Vss
-1 to 4.6
V
Voltage on NC or I/O pins relative to Vss
-1 to 4.6
V
Operating Temperature TA (Mil)
-55 to +125
°C
Operating Temperature TA (Ind)
-40 to +85
°C
Storage Temperature, Plastic
-55 to +125
°C
NOTE:
Stress greater than those listed under “Absolute Maximum Ratings” may cause permanent
damage to the device. This is a stress rating only and functional operation of the device
at these or any other conditions greater than those indicated in the operational sections
of this specication is not implied. Exposure to absolute maximum rating conditions for
extended periods may affect reliability.
CAPACITANCE (NOTE 2)
Parameter
Symbol
Max
Unit
Inut Capacitance: CK
CI1
5
pF
Addresses, BA0-1 Input Capacitance
CA
17
pF
Input Capacitance: All other input-only pins
CI2
7pF
Input/Output Capacitance: I/Os
CIO
8pF
IDD SPECIFICATIONS AND CONDITIONS (NOTES 1,6,11,13)
VCC = +3.3V ±0.3V; -55°C ≤ TA ≤ 125°C
Parameter/Condition
Symbol
Max
Units
Operating Current: Active Mode;
Burst = 2; Read or Write; tRC = tRC (min); CAS latency = 3 (3, 18, 19)
ICC1
460
mA
Standby Current: Active Mode; CKE = HIGH; CS = HIGH;
All banks active after tRCD met; No accesses in progress (3, 12, 19)
ICC3
180
mA
Operating Current: Burst Mode; Continuous burst;
Read or Write; All banks active; CAS latency = 3 (3, 18, 19)
ICC4
560
mA
Self Refresh Current: CKE - 0.2V Commercial and Industrial temperature only (27)
ICC7
4mA
BGA THERMAL RESISTANCE
Description
Symbol
Max
Units
Notes
Junction to Ambient
(No Airow)
Theta JA
18.5
°C/W
1
Junction to Ball
Theta JB
13.1
°C/W
1
Junction to Case (Top)
Theta JC
9.1
°C/W
1
NOTE 1: Refer to BGA Thermal Resistance Correlation application note at www.whiteedc.
com in the application notes section for modeling conditions.
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