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參數(shù)資料
| 型號： | WEDPN16M72V-100BM |
| 廠商： | MICROSEMI CORP-PMG MICROELECTRONICS |
| 元件分類： | DRAM |
| 英文描述： | 16M X 72 SYNCHRONOUS DRAM MODULE, 7 ns, PBGA219 |
| 封裝： | 32 X 25 MM, PLASTIC, BGA-219 |
| 文件頁數(shù)： | 1/13頁 |
| 文件大?。?/td> | 190K |
| 代理商： | WEDPN16M72V-100BM |
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White Electronic Designs Corporation (602) 437-1520 www.whiteedc.com
WEDPN16M72V-XBX
November 2003 Rev. 6
The 128MByte (1Gb) SDRAM is a high-speed CMOS, dynamic
random-access, memory using 5 chips containing 268,435,456
bits. Each chip is internally configured as a quad-bank DRAM with
a synchronous interface. Each of the chip’s 67,108,864-bit banks
is organized as 8,192 rows by 512 columns by 16 bits.
Read and write accesses to the SDRAM are burst oriented;
accesses start at a selected location and continue for a pro-
grammed number of locations in a programmed sequence.
Accesses begin with the registration of an ACTIVE command,
which is then followed by a READ or WRITE command. The
address bits registered coincident with the ACTIVE command
are used to select the bank and row to be accessed (BA0, BA1
select the bank; A0-12 select the row). The address bits regis-
select the starting column location for the burst access.
The SDRAM provides for programmable READ or WRITE burst
lengths of 1, 2, 4 or 8 locations, or the full page, with a burst
terminate option. An AUTO PRECHARGE function may be en-
abled to provide a self-timed row precharge that is initiated at the
end of the burst sequence.
The 1Gb SDRAM uses an internal pipelined architecture to achieve
high-speed operation. This architecture is compatible with the 2
n
rule of prefetch architectures, but it also allows the column address
to be changed on every clock cycle to achieve a high-speed, fully
random access. Precharging one bank while accessing one of the
other three banks will hide the precharge cycles and provide seam-
less, high-speed, random-access operation.
The 1Gb SDRAM is designed to operate in 3.3V, low-power
memory systems. An auto refresh mode is provided, along with
a power-saving, power-down mode.
16Mx72 Synchronous DRAM
! High Frequency = 100, 125MHz
! Package:
219 Plastic Ball Grid Array (PBGA), 32 x 25mm
! Single 3.3V ±0.3V power supply
! Fully Synchronous; all signals registered on positive edge
of system clock cycle
! Internal pipelined operation; column address can be
changed every clock cycle
! Internal banks for hiding row access/precharge
! Programmable Burst length 1,2,4,8 or full page
! 8192 refresh cycles
! Commercial, Industrial and Military Temperature Ranges
! Organized as 16M x 72
Weight: WEDPN16M72V-XBX - 2.5 grams typical
Discrete Approach
ACTUAL SIZE
S
A
V
I
N
G
S
Area
5 x 265mm2 = 1328mm2
800mm2
40%
I/O
5 x 54 pins = 270 pins
219 Balls
19%
Count
25
32
11.9
22.3
54
TSOP
54
TSOP
54
TSOP
54
TSOP
54
TSOP
White Electronic Designs
WEDPN16M72V-XBX
FEATURES
BENEFITS
! 40% SPACE SAVINGS
! Reduced part count
! Reduced I/O count
19% I/O Reduction
! Reduced trace lengths for lower parasitic capacitance
! Suitable for hi-reliability applications
! Laminate interposer for optimum TCE match
! Upgradeable to 32M x 72 density (contact factory for
information)
* The a product that is subject to change without notice.
GENERAL DESCRIPTION
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| WEDPN16M72VR-100B2I | 16M X 72 SYNCHRONOUS DRAM MODULE, 6 ns, PBGA219 |
| WEDPN16M72VR-125BC | 16M X 72 SYNCHRONOUS DRAM MODULE, 5.8 ns, PBGA219 |
| WEDPN16M72VR-66BM | 16M X 72 SYNCHRONOUS DRAM MODULE, 7.5 ns, PBGA219 |
| WEDPN4M64V-100BI | 4M X 64 SYNCHRONOUS DRAM, 7 ns, PBGA219 |
| WEDPN4M64V-125BM | 4M X 64 SYNCHRONOUS DRAM, 6 ns, PBGA219 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| WEDPN16M72V-125B2C | 制造商:WEDC 制造商全稱:White Electronic Designs Corporation 功能描述:16Mx72 Synchronous DRAM |
| WEDPN16M72V-125B2I | 制造商:WEDC 制造商全稱:White Electronic Designs Corporation 功能描述:16Mx72 Synchronous DRAM |
| WEDPN16M72V-125B2M | 制造商:White Electronic Designs 功能描述:DRAM Module SDRAM 1Gbit 制造商:Microsemi Corporation 功能描述:16M X 72 SDRAM MODULE W/REGISTERED BUFFERS, 3.3V, 100 MHZ, 2 - Bulk |
| WEDPN16M72V-125BC | 制造商:Microsemi Corporation 功能描述:16M X 72 SDRAM MODULE, 3.3V, 125 MHZ, 219 PBGA 32MM X 25MM, - Bulk |
| WEDPN16M72V-125BI | 制造商:Microsemi Corporation 功能描述:16M X 72 SDRAM MODULE, 3.3V, 125 MHZ, 219 PBGA 32MM X 25MM, - Bulk |
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