參數(shù)資料
型號(hào): WED8L24513V15BC
廠商: WHITE ELECTRONIC DESIGNS CORP
元件分類: SRAM
英文描述: 512K X 24 STANDARD SRAM, 15 ns, PBGA119
封裝: 14 X 22 MM, MO-163, BGA-119
文件頁(yè)數(shù): 1/6頁(yè)
文件大?。?/td> 247K
代理商: WED8L24513V15BC
1
White Electronic Designs Corporation (602) 437-1520 www.whiteedc.com
White Electronic Designs
WED8L24513V
Aug, 2002
Rev. 0A
White Electronic Designs Corp. reserves the right to change products or specications without notice.
PIN NAMES
BLOCK DIAGRAM
PIN CONFIGURATION
Asynchronous SRAM, 3.3V, 512Kx24
FEATURES
512Kx24 bit CMOS Static
Random Access Memory Array
Fast Access Times: 10, 12, and 15ns
Master Output Enable and Write Control
TTL Compatible Inputs and Outputs
Fully Static, No Clocks
Surface Mount Package
119 Lead BGA (JEDEC MO-163), No. 391
Small Footprint, 14mmx22mm
Multiple Ground Pins for Maximum Noise
Immunity
Single +3.3V (±5%) Supply Operation
DSP Memory Solution
Motorola DSP5630x
Analog Devices SHARCTM
DESCRIPTION
The WED8L24513VxxBC is a 3.3V, twelve megabit SRAM
constructed with three 512Kx8 die mounted on a multi-layer
laminate substrate. With 10 to 15ns access times, x24 width
and a 3.3V operating voltage, the WED8L24513V is ideal
for creating a single chip memory solution for the Motorola
DSP5630x (Figure 7) or a two chip solution for the Analog
Devices SHARCTM DSP (Figure 8).
The single or dual chip memory solutions offer improved
system performance by reducing the length of board traces
and the number of board connections compared to using
multiple monolithic devices.
The JEDEC Standard 119 lead BGA provides a 61% space
savings over using three 512Kx8, 400 mil wide SOJs and the
BGA package has a maximum height of 110 mils compared
to 148 mils for the SOJ packages.
A0-18
Address Inputs
E#
Chip Enable
W#
Master Write Enable
G#
Master Output Enable
DQ0-23
Common Data Input/Output
VCC
Power (3.3V ±5%)
GND
Ground
NC
No Connection
12
34
5
6
7
A
NC
AO
A1
A2
A3
A4
NC
B
NC
A5
A6
E#
A7
A8
NC
C
I/012
NC
I/00
D
I/013
VCC
GND
VCC
I/01
E
I/014
GND
VCC
GND
VCC
GND
I/02
F
I/015
VCC
GND
VCC
I/03
G
I/016
GND
VCC
GND
VCC
GND
I/04
H
I/017
VCC
GND
VCC
I/05
J
NC
GND
VCC
GND
VCC
GND
NC
K
I/018
VCC
GND
VCC
I/06
L
I/019
GND
VCC
GND
VCC
GND
I/07
M
I/020
VCC
GND
VCC
I/08
N
I/021
GND
VCC
GND
VCC
GND
I/09
P
I/022
VCC
GND
VCC
I/010
R
I/023
A18
NC
A17
I/011
T
NC
A9
A10
W#
A11
A12
NC
U
NC
A13
A14
G#
A15
A16
NC
512K x 24
Memory
Array
19
A0-A18
G#
W#
E#
DQ0-7
DQ8-15
DQ16-23
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