參數(shù)資料
型號(hào): WED416S16030C8SI
廠商: WHITE ELECTRONIC DESIGNS CORP
元件分類: DRAM
英文描述: 16M X 16 SYNCHRONOUS DRAM, 6 ns, PDSO54
封裝: TSOP2-54
文件頁數(shù): 1/26頁
文件大?。?/td> 935K
代理商: WED416S16030C8SI
1
White Electronic Designs Corporation (602) 437-1520 www.whiteedc.com
White Electronic Designs
WED416S16030A
April 2006
Rev. 1
White Electronic Designs Corp. reserves the right to change products or speci cations without notice.
The WED416S16030A is 268,435,456 bits of synchronous
high data rate DRAM organized as 4 x 4,196,304 words x
16 bits. Synchronous design allows precise cycle control
with the use of system clock. I/O transactions are possible
on every clock cycle. Range of operating frequencies,
programmable burst lengths and programmable latencies
allow the same device to be useful for a variety of high
bandwidth, high performance memory system applica-
tions.
Available in a 54 pin TSOP type II package the
WED416S16030A is tested over the industrial temp range
(-40°C to +85°C) providing a solution for rugged main
memory applications.
4M x 16 Bits x 4 Banks Synchronous DRAM
Single 3.3V power supply
Fully Synchronous to positive Clock Edge
Clock Frequency = 133, 125, and 100MHZ
SDRAM CAS Latency = 2
Burst Operation
Sequential or Interleave
Burst length = programmable 1,2,4,8 or full page
Burst Read and Write
Multiple Burst Read and Single Write
DATA Mask Control per byte
Auto Refresh (CBR) and Self Refresh
8192 refresh cycles across 64ms
Automatic and Controlled Precharge Commands
Suspend Mode and Power Down Mode
Industrial Temperature Range
PIN DESCRIPTION
A0-12
Address Inputs
BA0, BA1 Bank Select Addresses
CE#
Chip Select
WE#
Write Enable
CK
Clock Input
CKE
Clock Enable
DQ0-15
Data Input/Output
L(U)DQM Data Input/Output Mask
RAS#
Row Address Strobe
CAS#
Column Address Strobe
VDD
Power (3.3V)
VDDQ
Data Output Power
VSS
Ground
VSSQ
Data Output Ground
NC
No Connection
PIN CONFIGURATION
FEATURES
DESCRIPTION
*This product is subject to change without notice.
Pin
Front
Pin
Front
Pin
Front
1VCC
19
CE#
37
CKE
2
DQ0
20
BA0
38
CK
3VCCQ
21
BA1
39
UDQM
4
DQ1
22
A10/AP
40
NC/RFU
5
DQ2
23
A0
41
VSS
6VSSQ
24
A1
42
DQ8
7
DQ3
25
A2
43
VCCQ
8
DQ4
26
A3
44
DQ9
9VCCQ
27
VCC
45
DQ10
10
DQ5
28
VSS
46
VSSQ
11
DQ6
29
A4
47
DQ11
12
VSSQ
30
A5
48
DQ12
13
DQ7
31
A6
49
VCCQ
14
VCC
32
A7
50
DQ13
15
LDQM
33
A8
51
DQ14
16
WE#
34
A9
52
VSSQ
17
CAS#
35
A11
53
DQ15
18
RAS#
36
A12
54
VSS
相關(guān)PDF資料
PDF描述
WED416S8030A10SI 8M X 16 SYNCHRONOUS DRAM, 7 ns, PDSO54
WED7F325ZXE5SJ-60A 512K X 32 FLASH 5V PROM MODULE, 60 ns, PQMA68
WED7F325ZXE5SJ-100A 512K X 32 FLASH 5V PROM MODULE, 100 ns, PQMA68
WED7F325ZXE5SJ-90A 512K X 32 FLASH 5V PROM MODULE, 90 ns, PQMA68
WED7F325ZXE5SJ-100A 512K X 32 FLASH 5V PROM MODULE, 100 ns, PQMA68
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
WED416S8030A 制造商:WEDC 制造商全稱:White Electronic Designs Corporation 功能描述:2Mx16x 4 Banks Synchronous DRAM
WED416S8030A10SI 制造商:WEDC 制造商全稱:White Electronic Designs Corporation 功能描述:2Mx16x 4 Banks Synchronous DRAM
WED416S8030A12SI 制造商:WEDC 制造商全稱:White Electronic Designs Corporation 功能描述:2Mx16x 4 Banks Synchronous DRAM
WED416S8030A-SI 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Industrial SDRAM
WED48S8030E 制造商:WEDC 制造商全稱:White Electronic Designs Corporation 功能描述:2M x 8 Bits x 4 Banks Synchronous DRAM