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參數(shù)資料
| 型號： | WED3DL3216V10BI |
| 廠商： | MICROSEMI CORP-PMG MICROELECTRONICS |
| 元件分類： | DRAM |
| 英文描述： | 16M X 32 SYNCHRONOUS DRAM, 7 ns, PBGA119 |
| 封裝： | 17 X 23 MM, MO-163, BGA-119 |
| 文件頁數(shù)： | 1/27頁 |
| 文件大?。?/td> | 989K |
| 代理商： | WED3DL3216V10BI |
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White Electronic Designs Corporation (602) 437-1520 www.whiteedc.com
White Electronic Designs
WED3DL3216V
November, 2005
Rev. 1
White Electronic Designs Corp. reserves the right to change products or specications without notice.
16Mx32 SDRAM
40% Space Savings vs. Monolithic Solution
Reduced System Inductance and Capacitance
3.3V Operating Supply Voltage
Fully Synchronous to Positive Clock Edge
Clock Frequencies of 100MHz - 133MHz
Burst Operation
Sequential or Interleave
Burst Length = Programmable 1, 2, 4, 8
or Full Page
Burst Read and Write
Multiple Burst Read and Single Write
Data Mask Control Per Byte
Auto and Self Refresh
Automatic and Controlled Precharge Commands
Suspend Mode and Power Down Mode
119 Pin BGA, 17mm x 23mm
PIN DESCRIPTION
PIN CONFIGURATION
(Top view)
The WED3DL3216V is an 16Mx32 Synchronous DRAM
congured as 4x4Mx32. The SDRAM BGA is constructed
with two 16Mx16 SDRAM die mounted on a multi-layer
laminate substrate and packaged in a 119 lead, 17mm
by 23mm, BGA.
The WED3DL3216V is available in clock speeds
of 133MHz, 125MHz, and 100MHz. The range of
operating frequencies, programmable burst lengths and
programmable latencies allow the same device to be
useful for a variety of high bandwidth, high performance
memory system applications.
The package and design provides performance
enhancements via a 50% reduction in capacitance vs.
two monolithic devices. The design includes internal
ground and power planes which reduces inductance
on the ground and power pins allowing for improved
decoupling and a reduction in system noise.
12
3
4
5
6
7
AVCCQ
NC
BA0
NC
A10
A7
VCCQ
A
B
NC
A12
CAS#
A11
NC
B
C
NC
BA1
VCC
A9
A8
NC
C
D
DQC
NC
VSS
NC
VSS
NC
DQB
D
E
DQC
VSS
CE#
VSS
DQB
E
FVCCQ
DQC
VSS
RAS#
VSS
DQB
VCCQ
F
G
DQC
DQC DQMC
NC
DQMB
DQB
G
H
DQC
VSS
CKE
VSS
DQB
H
JVCCQ
VCC
NC
VCC
NC
VCC
VCCQ
J
K
DQD
VSS
CK
VSS
DQA
K
L
DQD
DQD DQMD
NC
DQMA
DQA
L
MVCCQ
DQD
VSS
WE#
VSS
DQA
VCCQ
M
N
DQD
VSS
A1
VSS
DQA
N
P
DQD
NC
VSS
A0
VSS
NC
DQA
P
RNC
A6
NC
VCC
NC
A2
NC
R
TNC
NC
A5
A4
A3
NC
T
UVCCQ
NC
VCCQ
U
12
3
4
5
6
7
A0 – A12 Address Bus
BA0-1
Bank Select Addresses
DQ
Data Bus
CK
Clock
CKE
Clock Enable
DQM
Data Input/Output Mask
RAS#
Row Address Strobe
CAS#
Column Address Strobe
CE#
Chip Enable
VCC
Power Supply pins, 3.3V
VCCQ
Data Bus Power Supply pins,3.3V
VSS
Ground pins
FEATURES
DESCRIPTION
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| WED3DL3216V10ES | 制造商:WEDC 制造商全稱:White Electronic Designs Corporation 功能描述:16Mx32 SDRAM |
| WED3DL3216V7BC | 制造商:WEDC 制造商全稱:White Electronic Designs Corporation 功能描述:16Mx32 SDRAM |
| WED3DL3216V7BI | 制造商:WEDC 制造商全稱:White Electronic Designs Corporation 功能描述:16Mx32 SDRAM |
| WED3DL3216V7ES | 制造商:WEDC 制造商全稱:White Electronic Designs Corporation 功能描述:16Mx32 SDRAM |
| WED3DL3216V8BC | 制造商:WEDC 制造商全稱:White Electronic Designs Corporation 功能描述:16Mx32 SDRAM |
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