參數(shù)資料
型號: WED3DG6418V10D2
廠商: WHITE ELECTRONIC DESIGNS CORP
元件分類: DRAM
英文描述: 16M X 64 SYNCHRONOUS DRAM MODULE, DMA168
封裝: DIMM-168
文件頁數(shù): 3/6頁
文件大小: 457K
代理商: WED3DG6418V10D2
3
White Electronic Designs Corporation (508) 366-5151 www.whiteedc.com
Aug. 2002 Rev. 0
ECO #15455
WED3DG6418V-D2
(Voltage Referenced to: VSS = 0V, TA = 0°C to +70°C)
ABSOLUTE MAXIMUM RATINGS
Parameter
Symbol
Value
Units
Voltage on any pin relative to VSS
VIN, Vout
-1.0 ~ 4.6
V
Voltage on VDD supply relative to VSS
VDD, VDDQ
-1.0 ~ 4.6
V
Storage Temperature
TSTG
-55 ~ +150
°C
Power Dissipation
PD
8
W
Short Circuit Current
IOS
50
mA
Note: Permanent device damage may occur if "ABSOLUTE MAXIMUM RATINGS" are exceeded.
Functional operation should be restricted to recommended operating condition.
Exposure to higher than recommended voltage for extended periods of time could affect device reliability.
RECOMMENDED DC OPERATING CONDITIONS
Parameter
Symbol
Min
Typ
Max
Unit
Note
Supply Voltage
VDD
3.0
3.3
3.6
V
Input High Voltage
VIH
2.0
3.0 VDDQ+0.3 V
1
Input Low Voltage
VIL
-0.3
0.8
V
2
Output High Voltage
VOH
2.4
V
IOH= -2mA
Output Low Voltage
VOL
0.4
V
IOL= -2mA
Input Leakage Current
ILI
-10
10
A
3
Note: 1. VIH (max)= 5.6V AC. The overshoot voltage duration is 3ns.
2. VIL (min)= -2.0V AC. The undershoot voltage duration is 3ns.
3. Any input 0V VIN VDDQ
Input leakage currents include Hi-Z output leakage for all bi-directional buffers with Tri-State
outputs.
CAPACITANCE
(TA = 23°C, f = 1MHz, VDD = 3.3V, VREF=1.4V 6200mV)
Parameter
Symbol
Min
Max
Unit
Input Capacitance (A0-A12)
CIN1
-
45
pF
Input Capacitance (RAS,CAS,WE)
CIN2
-
45
pF
Input Capacitance (CKE0)
CIN3
-
45
pF
Input Capacitance (CLK0,CLK2)
CIN4
-
20
pF
Input Capacitance (CS0,CS2)
CIN5
-
25
pF
Input Capacitance (DQM0-DQM7)
CIN6
-
12
pF
Input Capacitance (BA0-BA1)
CIN7
-
45
pF
Data input/output capacitance (DQ0-DQ63)
Cout
-
12
pF
相關PDF資料
PDF描述
WS512K32V-15G2UCA 512K X 32 MULTI DEVICE SRAM MODULE, 15 ns, CQFP68
W3E32M64S-200SBI 32M X 64 DDR DRAM, 0.8 ns, PBGA208
W3EG6433S262BD4 32M X 64 DDR DRAM MODULE, 0.75 ns, DMA200
WS57C256F-35C 32K X 8 UVPROM, 35 ns, CQCC32
WF128K32A-120HSI 512K X 8 FLASH 12V PROM MODULE, 120 ns, CHIP66
相關代理商/技術參數(shù)
參數(shù)描述
WED3DG6418V-D1 制造商:未知廠家 制造商全稱:未知廠家 功能描述:SDRAM Modules - 144 Pin SO-DIMM. Unbuffered
WED3DG6418V-D2 制造商:未知廠家 制造商全稱:未知廠家 功能描述:SDRAM Modules - 168 Pin DIMM. Unbuffered
WED3DG6419V10D2 制造商:WEDC 制造商全稱:White Electronic Designs Corporation 功能描述:128MB - 16Mx64 SDRAM UNBUFFERED
WED3DG6419V75D2 制造商:WEDC 制造商全稱:White Electronic Designs Corporation 功能描述:128MB - 16Mx64 SDRAM UNBUFFERED
WED3DG6419V7D2 制造商:WEDC 制造商全稱:White Electronic Designs Corporation 功能描述:128MB - 16Mx64 SDRAM UNBUFFERED