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參數(shù)資料
| 型號： | WED3DG64128V75D1 |
| 廠商： | MICROSEMI CORP-PMG MICROELECTRONICS |
| 元件分類： | DRAM |
| 英文描述： | 128M X 64 SYNCHRONOUS DRAM MODULE, DMA144 |
| 封裝： | SODIMM-144 |
| 文件頁數(shù)： | 4/5頁 |
| 文件大小： | 424K |
| 代理商： | WED3DG64128V75D1 |
WED3DG64128V-D1
4
White Electronic Designs Corporation (602) 437-1520 www.whiteedc.com
White Electronic Designs
June 2003
Rev. 1
White Electronic Designs Corp. reserves the right to change products or specifications without notice.
WED3DG64128V-D1
5
White Electronic Designs Corporation (602) 437-1520 www.whiteedc.com
White Electronic Designs
June 2003
Rev. 1
White Electronic Designs Corp. reserves the right to change products or specifications without notice.
OPERATING CURRENT CHARACTERISTICS
(VCC = 3.3V, TA = 0°C to +70°C)
Notes: 1. Measured with outputs open.
2. Refresh period is 64ms.
3. Unless otherwise noticed, input swing level is CMOS (VIH/VIL = VCCQ/VSSQ)
Version
Parameter
Symbol
Conditions
133
100
Units
Note
Operating Current
(One bank active)
ICC1
Burst Length = 1
tRC ≥ tRC(min)
IOL = 0mA
1,680 1,520
mA
1
Precharge Standby Current
in Power Down Mode
ICC2P
CKE ≤ VIL(max), tCC = 10ns
130
mA
ICC2PS
CKE & CK ≤ VIL(max), tCC = ∞
120
Precharge Standby Current
in Non-Power Down Mode
ICC2N
CKE ≥ VIH(min), CS ≥ VIH(min), tcc =10ns
Input signals are charged one time during 20ns
320
mA
ICC2NS
CKE ≥ VIH(min), CK ≤VIL(max), tCC = ∞
Input signals are stable
160
Active Standby Current in
Power-Down Mode
ICC3P
CKE ≥ VIL(max), tCC = 10ns
160
mA
ICC3PS
CKE & CK ≤ VIL(max), tCC = ∞
130
Active Standby Current in
Non-Power Down Mode
ICC3N
CKE ≥ VIH(min), CS ≥ VIH(min), tcc = 10ns
Input signals are changed one time during 20ns
480
mA
ICC3NS
CKE ≥ VIH(min), CK ≤ VIL(max), tcc = ∞
Input signals are stable
360
mA
Operating Current (Burst mode)
ICC4
Io = mA
Page burst
4 Banks activated
tCCD = 2CK
1,680 1,440
mA
1
Refresh Current
ICC5
tRC ≥ tRC(min)
2,720 2,560
mA
2
Self Refresh Current
ICC6
CKE ≤ 0.2V
115
mA
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