參數(shù)資料
型號(hào): WED3DG639V75D2
廠商: MICROSEMI CORP-PMG MICROELECTRONICS
元件分類: DRAM
英文描述: 8M X 64 SYNCHRONOUS DRAM MODULE, DMA168
封裝: DIMM-168
文件頁數(shù): 4/5頁
文件大?。?/td> 116K
代理商: WED3DG639V75D2
June 2003
Rev. 1
WED3DG649V-D2
White Electronic Designs Corporation (602) 437-1520 www.wedc.com
White Electronic Designs
White Electronic Designs Corp. reserves the right to change products or specications without notice.
OPERATING CURRENT CHARACTERISTICS
(VCC = 3.3V, 0°C
TA 70°C)
Notes: 1. Measured with outputs open.
2. Refresh period is 64ms.
3. Unless otherwise noticed, input swing level is CMOS (VIH/VIL = VCC/VSSQ)
Parameters
Symbol
Conditions
Versions
Units
Note
133
100
Operating Current
(One bank active)
ICC1
Burst Length = 1
tRC ≥ tRC(min)
IOL = 0mA
520
440
mA
1
Precharge Standby Current
in Power Down Mode
ICC2P
CKE ≤ VIL(max), tCC = 10ns
10
mA
ICC2PS
CKE & CK ≤ VIL(max), tCC = ∞
10
mA
Precharge Standby Current
in Non-Power Down Mode
ICC2N
CKE ≥ VIH(min), CS ≥ VIH(min), tCC =10ns
Input signals are charged one time during 20
80
mA
ICC2NS
CKE ≥ VIH(min), CK ≤ VIL(max), tCC= ∞
Input signals are stable
40
mA
Active standby current in power-
down mode
ICC3P
CKE ≥ VIL(max), tCC = 10ns
20
mA
ICC3PS
CKE & CK ≤ VIL(max), tCC = ∞
20
Active standby in current non
power-down mode
ICC3N
CKE ≥ VIH(min), CS ≥ VIH(min), tCC = 10ns
Input signals are charged one time during 20ns
120
mA
ICC3NS
CKE ≥ VIH(min), CK ≤ VIL(max), tCC = ∞
input signals are stable
100
mA
Operating current (Burst mode)
ICC4
Io = mA
Page burst
4 Banks activated
tCCD = 2CK
600
520
mA
1
Refresh current
ICC5
tRC ≥ tRC(min)
880
760
mA
2
Self refresh current
ICC6
CKE ≤ 0.2V
10
mA
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