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參數(shù)資料
| 型號： | WED3DG6366V7D2F |
| 廠商： | MICROSEMI CORP-PMG MICROELECTRONICS |
| 元件分類： | DRAM |
| 英文描述： | SYNCHRONOUS DRAM MODULE, DMA168 |
| 封裝： | LEAD FREE, DIMM-144 |
| 文件頁數(shù)： | 4/9頁 |
| 文件大小： | 169K |
| 代理商： | WED3DG6366V7D2F |
4
White Electronic Designs Corporation (602) 437-1520 www.whiteedc.com
White Electronic Designs
WED3DG6466V-D2
May 2005
Rev. 1
White Electronic Designs Corp. reserves the right to change products or specications without notice.
IDD SPECIFICATIONS AND CONDITIONS
VCC, VCCQ = +3.3V ±0.3V; SDRAM component values only
PARAMETER/CONDITION
SYMBOL
MAX
UNITS
NOTES
7
7.5 & 10
OPERATING CURRENT: Active Mode; Burst = 2; READ or WRITE; tRC = tRC (MIN)
IDD1
1,600
1,440
mA
1
STANDBY CURRENT: Power-Down Mode; All device devicebanks idle; CKE = LOW
IDD2
56
50
mA
STANDBY CURRENT: Active Mode; CKE = HIGH; CS# = HIGH; All device banks active
after tRCD met; No accesses in progress
IDD3
720
280
mA
OPERATING CURRENT: Burst Mode; Continuous burst; READ or WRITE; All device
banks active
IDD4
1,600
1,360
mA
1
AUTO REFRESH CURRENT
tRFC = tRFC (MIN)
IDD5
2,640
2,480
mA
2
CKE = HIGH; CS# = HIGH
tRFC = 7.8125μsIDD6
96
mA
SELF REFRESH CURRENT: CKE < 0.2V
IDD7
60
mA
Notes:
1. Measured with outputs open.
2. Refresh period is 64ms.
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