參數(shù)資料
型號: WE512K16-200G4Q
廠商: WHITE ELECTRONIC DESIGNS CORP
元件分類: PROM
英文描述: 512K X 16 EEPROM 5V MODULE, 200 ns, CQFP68
封裝: 40 MM, HERMETIC SEALED, CERAMIC, QFP-68
文件頁數(shù): 6/10頁
文件大?。?/td> 373K
代理商: WE512K16-200G4Q
5
White Electronic Designs Corporation (602) 437-1520 www.whiteedc.com
White Electronic Designs
WE512K16-XG4X
April 1999
Rev. 2
White Electronic Designs Corp. reserves the right to change products or specications without notice.
ADDRESS
CS#
OE#
OUTPUT
READ
The module stores data at the memory location determined
by the address pins. When CS# and OE# are low and WE#
is high, this data is present on the outputs. When CS# and
OE# are high, the outputs are in a high impedance state.
This two line control prevents bus contention.
Notes:
OE# may be delayed up to tACS - tOE after the falling edge of CS# without impact
on tOE or by tACC - toe after an address change without impact on tACC.
CS1-4# are used as bank selects.
During reads, only one CSx# can be active at one time.
AC READ CHARACTERISTICS
VCC = 5.0V, VSS = 0V, -55°C ≤ TA ≤ +125°C
Parameter
Symbol
-140
-150
-200
Unit
Min
Max
Min
Max
Min
Max
Read Cycle Time
trc
140
150
200
ns
Address Access Time
tacc
140
150
200
ns
Chip Select Access Time
tacs
140
150
200
ns
Output Hold from Address Change, OE# or CS#
toh
0
ns
Output Enable to Output Valid
toe
0
50
0
55
0
55
ns
Chip Select or OE# to High Z Output
tdf
50
70
ns
FIGURE 5 – READ WAVEFORMS
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