參數(shù)資料
型號(hào): WE32K32N-150G2UMA
廠商: MICROSEMI CORP-PMG MICROELECTRONICS
元件分類: PROM
英文描述: EEPROM 5V MODULE, CQFP68
封裝: 0.140 INCH HEIGHT, CERAMIC, HERMETIC SEALED QFP-68
文件頁(yè)數(shù): 12/13頁(yè)
文件大?。?/td> 533K
代理商: WE32K32N-150G2UMA
8
White Electronic Designs Corporation (602) 437-1520 www.whiteedc.com
White Electronic Designs
WE32K32-XXX
March 2006
Rev. 4
White Electronic Designs Corp. reserves the right to change products or specications without notice.
PAGE WRITE OPERATION
The WE32K32-XXX has a page write operation that allows
one to 64 bytes of data to be written into the device and
consecutively loads during the internal programming
period. Successive bytes may be loaded in the same
manner after the rst data byte has been loaded. An
internal timer begins a time out operation at each write
cycle. If another write cycle is completed within 150μs
or less, a new time out period begins. Each write cycle
restarts the delay period. The write cycles can be continued
as long as the interval is less than the time out period.
PAGE WRITE CHARACTERISTICS
VCC = 5.0V, GND = 0V, -55°C ≤ TA ≤ +125°C
PAGE MODE WRITE CHARACTERISTICS
Parameter
Symbol
-80
-90
-120
-150
Unit
Min
Max
Min
Max
Min
Max
Min
Max
Write Cycle Time, TYP = 6ms
tWC
10
ms
Data Set-up Time
tDS
50
100
ns
Data Hold Time
tDH
0
10
ns
Write Pulse Width
tWP
100
150
ns
Byte Load Cycle Time
tBLC
150
μs
Write Pulse Width High
tWPH
50
ns
The usual procedure is to increment the least signicant
address lines from A0 through A5 at each write cycle. In this
manner a page of up to 64 bytes can be loaded in to the
EEPROM in a burst mode before beginning the relatively
long interval programming cycle.
After the 150μs time out is completed, the EEPROM
begins an internal write cycle. During this cycle the entire
page of bytes will be written at the same time. The internal
programming cycle is the same regardless of the number
of bytes accessed.
FIGURE 8 – PAGE WRITE WAVEFORMS
NOTE:
1. Decoded Address Lines must be valid for the duration of the write.
OE#
CS#
WE#
ADDRESS (1)
DATA
BYTE 0
BYTE 1
BYTE 2
BYTE 3
BYTE n
BYTE n + 1
VALID DATA
VALID
ADDRESS
tWC
tBLC
tWPH
tWP
tDH
tDS
相關(guān)PDF資料
PDF描述
WED3EG7232S403JD3SG 32M X 72 DDR DRAM MODULE, 0.7 ns, DMA184
WF2M16-120DAC5A 2M X 16 FLASH 5V PROM MODULE, 120 ns, CDSO56
WF2M16-120FLM5A 2M X 16 FLASH 5V PROM MODULE, 120 ns, CDFP44
WMS128K8-17FM 128K X 8 STANDARD SRAM, 17 ns, CDFP36
WMS128K8-45DRCA 128K X 8 STANDARD SRAM, 45 ns, CDSO32
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
WE32K32N-150G2UQ 制造商:WEDC 制造商全稱:White Electronic Designs Corporation 功能描述:32Kx32 EEPROM MODULE, SMD 5962-94614
WE32K32N-150G2UQA 制造商:WEDC 制造商全稱:White Electronic Designs Corporation 功能描述:32Kx32 EEPROM MODULE, SMD 5962-94614
WE32K32N-150H1C 制造商:WEDC 制造商全稱:White Electronic Designs Corporation 功能描述:32Kx32 EEPROM MODULE, SMD 5962-94614
WE32K32N-150H1CA 制造商:未知廠家 制造商全稱:未知廠家 功能描述:EEPROM|32KX32|CMOS|PGA|66PIN|CERAMIC
WE32K32N-150H1I 制造商:WEDC 制造商全稱:White Electronic Designs Corporation 功能描述:32Kx32 EEPROM MODULE, SMD 5962-94614