- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄202120 > WE128K32N200H1IA (MICROSEMI CORP-PMG MICROELECTRONICS) EEPROM 5V MODULE, CPGA66 PDF資料下載
參數(shù)資料
| 型號(hào)： | WE128K32N200H1IA |
| 廠商： | MICROSEMI CORP-PMG MICROELECTRONICS |
| 元件分類： | PROM |
| 英文描述： | EEPROM 5V MODULE, CPGA66 |
| 封裝： | 1.075 X 1.075 INCH, HERMETIC SEALED, CERAMIC, HIP-66 |
| 文件頁數(shù)： | 8/14頁 |
| 文件大?。?/td> | 497K |
| 代理商： | WE128K32N200H1IA |
3
White Electronic Designs Corporation (602) 437-1520 www.whiteedc.com
White Electronic Designs
WE128K32-XXX
March 2008
Rev. 12
White Electronic Designs Corp. reserves the right to change products or specications without notice.
FIGURE 3
AC Test Circuit
DC CHARACTERISTICS
VCC = 5.0V, GND = 0V, -55°C ≤ TA ≤ +125°C
Parameter
Symbol
Conditions
Min
Max
Unit
Input Leakage Current
ILI
VCC = 5.5, VIN = GND to VCC
10
μA
Output Leakage Current
ILOx32
CS# = VIH, OE# = VIH, VOUT = GND to VCC
10
μA
Operating Supply Current (x32)
ICCx32
CS# = VIL, OE# = VIH, f = 5MHz
250
mA
Standby Current
ISB
CS# = VIH, OE# = VIH, f = 5MHz
2.5
mA
Output Low Voltage
VOL
IOL = 2.1mA, VCC = 4.5V
0.45
V
Output High Voltage
VOH
IOH = -400μA, VCC = 4.5V
2.4
V
NOTE: DC test conditions: VIH = VCC -0.3V, VIL = 0.3V
TRUTH TABLE
CS#
OE#
WE#
Mode
Data I/O
H
X
Standby
High Z
L
H
Read
Data Out
L
H
L
Write
Data In
X
H
X
Out Disable
High Z/Data Out
X
H
Write
X
L
X
Inhibit
CAPACITANCE
TA = +25°C
Parameter
Symbol
Conditions
Max Unit
OE# capacitance
COE
VIN = 0 V, f = 1.0 MHz
50
pF
WE1-4# capacitance
HIP (PGA)
CWE
VIN = 0 V, f = 1.0 MHz
20
pF
CQFP G2T
20
CS1-4# capacitance
CCS
VIN = 0 V, f = 1.0 MHz
20
pF
Data I/O capacitance
CI/O
VI/O = 0 V, f = 1.0 MHz
20
pF
Address input capacitance
CAD
VIN = 0 V, f = 1.0 MHz
50
pF
This parameter is guaranteed by design but not tested.
ABSOLUTE MAXIMUM RATINGS
Parameter
Symbol
Unit
Operating Temperature
TA
-55 to +125
°C
Storage Temperature
TSTG
-65 to +150
°C
Signal Voltage Relative to GND
VG
-0.6 to + 6.25
V
Voltage on OE# and A9
-0.6 to +13.5
V
NOTE:
Stresses above those listed under "Absolute Maximum Ratings" may cause permanent
damage to the device. This is a stress rating only and functional operation of the device
at these or any other conditions above those indicated in the operational sections of
this specication is not implied. Exposure to absolute maximum rating conditions for
extended periods may affect device reliability.
RECOMMENDED OPERATING CONDITIONS
Parameter
Symbol
Min
Max
Unit
Supply Voltage
VCC
4.5
5.5
V
Input High Voltage
VIH
2.0
VCC + 0.3
V
Input Low Voltage
VIL
-0.5
+0.8
V
Operating Temp. (Mil.)
TA
-55
+125
°C
Operating Temp. (Ind.)
TA
-40
+85
°C
AC TEST CONDITIONS
Parameter
Typ
Unit
Input Pulse Levels
VIL = 0, VIH = 3.0
V
Input Rise and Fall
5
ns
Input and Output Reference Level
1.5
V
Output Timing Reference Level
1.5
V
Notes: VZ is programmable from -2V to +7V.
IOL & IOH programmable from 0 to 16mA.
Tester Impedance Z0 = 75Ω.
VZ is typically the midpoint of VOH and VOL.
IOL & IOH are adjusted to simulate a typical resistive load circuit.
ATE tester includes jig capacitance.
Current Source
IOH
IOL
Current Source
Vz ~ 1.5V
Bipolar Supply
~
D.U.T
Ceff = 50 pf
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| WE128K32P125H1C | EEPROM 5V MODULE, CPGA66 |
| WE128K32P140H1M | EEPROM 5V MODULE, CPGA66 |
| WE128K32P200G2TMA | EEPROM 5V MODULE, CQFP68 |
| WF128K32-70G2LM5 | 128K X 32 FLASH 5V PROM MODULE, 70 ns, CQFP68 |
| WMS512K8V-17FMA | 512K X 8 STANDARD SRAM, 17 ns, CDFP36 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| WE128K32N-200H1IA | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x32 EEPROM Module |
| WE128K32N-200H1M | 制造商:Microsemi Corporation 功能描述:128K X 32 EEPROM MODULE, 200NS, NO CONNECT, 66 PGA 1.075" SQ - Bulk |
| WE128K32N-200H1MA | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x32 EEPROM Module |
| WE128K32N-200H1Q | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x32 EEPROM Module |
| WE128K32N-200H1QA | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x32 EEPROM Module |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。