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參數(shù)資料
| 型號： | WE128K32-200G4Q |
| 廠商： | WHITE ELECTRONIC DESIGNS CORP |
| 元件分類： | PROM |
| 英文描述： | 128K X 32 EEPROM 5V MODULE, 200 ns, CQMA68 |
| 封裝： | CERAMIC, QFP-68 |
| 文件頁數(shù)： | 9/15頁 |
| 文件大?。?/td> | 297K |
| 代理商： | WE128K32-200G4Q |
3
White Electronic Designs Corporation (602) 437-1520 www.whiteedc.com
WE128K32-XXX
ABSOLUTE MAXIMUM RATINGS
TRUTH TABLE
FIG. 4
AC TEST CIRCUIT
AC TEST CONDITIONS
I
Current Source
D.U.T.
C
= 50 pf
eff
I
OL
V
≈ 1.5V
(Bipolar Supply)
Z
Current Source
OH
NOTES:
VZ is programmable from -2V to +7V.
IOL & IOH programmable from 0 to 16mA.
Tester Impedance Z0 = 75
.
VZ is typically the midpoint of VOH and VOL.
IOL & IOH are adjusted to simulate a typical resistive load circuit.
ATE tester includes jig capacitance.
RECOMMENDED OPERATING CONDITIONS
DC CHARACTERISTICS
(VCC = 5.0V, VSS = 0V, TA = -55
°C to +125°C)
Parameter
Typ
Unit
Input Pulse Levels
VIL = 0, VIH = 3.0
V
Input Rise and Fall
5
ns
Input and Output Reference Level
1.5
V
Output Timing Reference Level
1.5
V
Parameter
Symbol
Unit
Operating Temperature
TA
-55 to +125
°C
Storage Temperature
TSTG
-65 to +150
°C
Signal Voltage Relative to GND
VG
-0.6 to +6.25
V
Voltage on OE and A9
-0.6 to +13.5
V
NOTE:
Stresses above those listed under "Absolute Maximum Ratings" may cause
permanent damage to the device. This is a stress rating only and functional
operation of the device at these or any other conditions above those indicated
in the operational sections of this specification is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect
device reliability.
CS
OE
WE
Mode
Data I/O
H
X
Standby
High Z
L
H
Read
Data Out
L
H
L
Write
Data In
X
H
X
Out Disable
High Z/Data Out
X
H
Write
X
L
X
Inhibit
Parameter
Symbol
Min
Max
Unit
Supply Voltage
VCC
4.5
5.5
V
Input High Voltage
VIH
2.0
VCC + 0.3
V
Input Low Voltage
VIL
-0.5
+0.8
V
Operating Temp. (Mil.)
TA
-55
+125
°C
Operating Temp. (Ind.)
TA
-40
+85
°C
Parameter
Symbol
Conditions
Min
Max
Unit
Input Leakage Current
ILI
VCC = 5.5, VIN = GND to VCC
10
A
Output Leakage Current
ILOx32
CS = VIH, OE = VIH, VOUT = GND to VCC
10
A
Operating Supply Current x 32 Mode
ICCx32
CS = VIL, OE = VIH, f = 5MHz
250
mA
Standby Current
ISB
CS = VIH, OE = VIH, f = 5MHz
2.5
mA
Output Low Voltage
VOL
IOL = 2.1mA, VCC = 4.5V
0.45
V
Output High Voltage
VOH
IOH = -400
A, VCC = 4.5V
2.4
V
NOTE: DC test conditions: VIH = VCC -0.3V, VIL = 0.3V
CAPACITANCE
(TA = +25
°C)
Parameter
Symbol
Conditions
Max
Unit
OE capacitance
COE
VIN = 0 V, f = 1.0 MHz
50
pF
WE1-4 capacitance
CWE
VIN = 0 V, f = 1.0 MHz
pF
HIP (PGA)
20
CQFP G4
50
CQFP G2T/G1U
20
CS1-4 capacitance
CCS
VIN = 0 V, f = 1.0 MHz
20
pF
Data I/O capacitance
CI/O
VI/O = 0 V, f = 1.0 MHz
20
pF
Address input capacitance
CAD
VIN = 0 V, f = 1.0 MHz
50
pF
This parameter is guaranteed by design but not tested.
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