參數(shù)資料
型號(hào)： W987Z6CBN
英文描述： DRAM
中文描述： 內(nèi)存
文件頁數(shù)： 8/47頁
文件大?。?/td> 1227K
代理商： W987Z6CBN
W987Z6CBN/BG
- 8 -
Notes:
1. Operation exceeds "ABSOLUTE MAXIMUM RATING" may adversely affect the life and reliability of
the devices.
2. All voltages are referenced to V
SS
3. These parameters depend on the cycle rate and listed values are measured at a cycle rate with the
minimum values of t
CK
and t
RC
.
4. These parameters depend on the output loading conditions. specified values are obtained with
output open.
5. Power up sequence is further described in the "Functional Description" section.
6. AC Testing Conditions
Output Reference Level
0.5 * V
DD
Q
Output Load
See diagram below
Input Signal Levels
0.8* V
DD
Q / 0.2* V
DD
Q
Transition Time (Rise and Fall) of Input Signal
1 nS
Input Reference Level
0.5 * V
DD
Q
50 ohms
AC TEST LOAD
Z = 50 ohms
output
30pF
0.5 x V
DD
Q
7. Transition times are measured between V
IH
and V
IL
.
8. t
HZ
defines the time at which the outputs achieve the open circuit condition and is not referenced to
output level.
9. The value that shown on table are based on silicon simulation result. It will be changed according
to real product characteristic.
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