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參數(shù)資料
| 型號： | W982516AH-8H |
| 廠商： | WINBOND ELECTRONICS CORP |
| 元件分類： | DRAM |
| 英文描述： | 16M X 16 SYNCHRONOUS DRAM, 6 ns, PDSO54 |
| 封裝： | 0.400 INCH, 0.80 MM PITCH, TSOP2-54 |
| 文件頁數(shù)： | 1/41頁 |
| 文件大?。?/td> | 1367K |
| 代理商： | W982516AH-8H |
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W982516AH
4M
× 4 BANKS × 16 BIT SDRAM
Publication Release Date: February 2001
- 1 -
Revision A2
GENERAL DESCRIPTION
W982516AH is a high-speed synchronous dynamic random access memory (SDRAM), organized as
4M words
× 4 banks × 16 bits. Using pipelined architecture and 0.175 m process technology,
W982516AH delivers a data bandwidth of up to 143M words per second (-7). To fully comply with the
personal computer industrial standard, W982516AH is sorted into three speed grades: -7, -75, and -
8H. The -7 is compliant to the 143 MHz/CL3 or PC133/CL2 specification, the -75 is compliant to the
PC133/CL3 specification, the -8H is compliant to the PC100/CL2 specification. For handheld device
application, we also provide a low power option, the grade of 75L, with Self Refresh Current under
1mA.
Accesses to the SDRAM are burst oriented. Consecutive memory location in one page can be
accessed at a burst length of 1, 2, 4, 8 or full page when a bank and row is selected by an ACTIVE
command. Column addresses are automatically generated by the SDRAM internal counter in burst
operation. Random column read is also possible by providing its address at each clock cycle. The
multiple bank nature enables interleaving among internal banks to hide the precharging time.
By having a programmable Mode Register, the system can change burst length, latency cycle,
interleave or sequential burst to maximize its performance. W982516AH is ideal for main memory in
high performance applications.
FEATURES
3.3V
±0.3V Power Supply
Up to 143 MHz Clock Frequency
4,194,304 Words
× 4 Banks × 16 Bits Organization
Self Refresh Mode: Standard and Low Power
CAS Latency: 2 and 3
Burst Length: 1, 2, 4, 8, and Full Page
Burst Read, Single Writes Mode
Byte Data Controlled by LDQM, UDQM
Power-down Mode
Auto-precharge and Controlled Precharge
8K Refresh Cycles/64 mS
Interface: LVTTL
Packaged in TSOP II 54-pin, 400 mil - 0.80
AVAILABLE PART NUMBER
PART NUMBER
SPEED GRADE
SELF REFRESH CURRENT
(MAX.)
W982516AH-7
PC133/CL2
3 mA
W982516AH-75
PC133/CL3
3 mA
W982516AH-8H
PC100/CL2
3 mA
W982516AH75L
PC133/CL3
1 mA
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| W9825G2DB-6 | 8M X 32 SYNCHRONOUS DRAM, 5 ns, PBGA90 |
| W9825G6JH-6 | 16M X 16 SYNCHRONOUS DRAM, 5 ns, PDSO54 |
| W9825G6JH-5 | 16M X 16 SYNCHRONOUS DRAM, 5 ns, PDSO54 |
| W986416DH-6 | 4M X 16 SYNCHRONOUS DRAM, 5 ns, PDSO54 |
| W986416EH-6 | 4M X 16 SYNCHRONOUS DRAM, 5 ns, PDSO54 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| W982516BH | 制造商:WINBOND 制造商全稱:Winbond 功能描述:4M X 4 BANKS X 16 BIT SDRAM |
| W982516BH-7 | 制造商:WINBOND 制造商全稱:Winbond 功能描述:4M X 4 BANKS X 16 BIT SDRAM |
| W982516BH-75 | 制造商:WINBOND 制造商全稱:Winbond 功能描述:4M X 4 BANKS X 16 BIT SDRAM |
| W982516BH75I | 制造商:WINBOND 制造商全稱:Winbond 功能描述:4M X 4 BANKS X 16 BIT SDRAM |
| W982516BH75L | 制造商:WINBOND 制造商全稱:Winbond 功能描述:4M X 4 BANKS X 16 BIT SDRAM |
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